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  • 1.
    Zhang, Yafan
    et al.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Hammam, Tag
    RISE - Research Institutes of Sweden, Swerea, Swerea KIMAB.
    Belov, Ilja
    Jönköping University, Sweden.
    Sjögren, Torsten
    RISE - Research Institutes of Sweden, Safety and Transport, Safety.
    Bakowski, Mietek
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Nee, Hans Peter
    KTH Royal Institute of Technology, Sweden.
    Thermomechanical Analysis and Characterization of a Press-Pack Structure for SiC Power Module Packaging Applications2017In: IEEE Transactions on Components, Packaging, and Manufacturing Technology, ISSN 2156-3950, E-ISSN 2156-3985, Vol. 7, no 7, p. 1089-1100Article in journal (Refereed)
    Abstract [en]

    This paper presents an experimental methodology for the characterization of thermomechanical displacement and friction properties in a free-floating press-pack structure, and evaluation of the tensile stress on the semiconductor die through simulation of different mechanical and thermal loading conditions. The press-pack structure consists of a single silver-metallized (1 μm) silicon carbide die (400 μm) in contact with rhodium-coated (0.4 μm) molybdenum square plates. The thermomechanical displacements in the press-pack structure have been obtained using the digital image correlation technique, and the mean random error has been $± $0.1 μm, which is approximately 10 ppm of the measured length (10.5 mm). The developed experimental method has led to an analytical estimation of friction coefficients on the interfaces' silicon carbide-molybdenum and molybdenum-copper. The results demonstrate that the thin silver layer behaves as a solid film lubricant. A 2-D finite-element model representing the experimental setup has been implemented. The difference in displacement between measurement and simulation is less than 8%. Furthermore, the coinfluence of the design parameters on the thermomechanical performance of the stacked structure has been analyzed through simulations. Finally, design guidelines to reduce the tensile stress on the silicon carbide die have been proposed regarding free-floating press-pack power electronics packaging.

  • 2.
    Zhang, Yafan
    et al.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Nee, Hans Peter
    KTH Royal Institute of Technology, Sweden.
    Hammam, Tag
    RISE - Research Institutes of Sweden, Materials and Production, KIMAB.
    Belov, Ilja
    Jönköping University, Sweden.
    Ranstad, Per
    GE Power Sweden AB, Sweden.
    Bakowski, Mietek
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Multiphysics Characterization of a Novel SiC Power Module2019In: IEEE Transactions on Components, Packaging, and Manufacturing Technology, ISSN 2156-3950, E-ISSN 2156-3985, Vol. 9, no 3, p. 489-501Article in journal (Refereed)
    Abstract [en]

    This paper proposes a novel power module concept specially designed for highly reliable silicon carbide power devices for medium- and high-power applications. The concept consists of two clamped structures: 1) a press-pack power stage accommodating silicon carbide power switch dies, and 2) perpendicularly clamped press-pack heatsinks, in which, the heatsinks are in contact with electrically insulated case plates of the power stage. The concept enables bondless package with symmetric double-sided cooling of the dies and allows for an order of magnitude higher clamping force on the heatsinks than what can be applied on the dies. The concept has been evaluated in a first demonstrator (half-bridge configuration with ten paralleled silicon carbide dies in each position). Experimental methodologies, setups, and procedures have been presented. The commutation loop inductance is approximately 9 nH at 78 kHz. The junction-to-case thermal resistance is approximately 0.028 K/W. Furthermore, a simplified 3D finite element thermomechanical model representing the center unit of the demonstrator, has been established for the purpose of future optimization. The accuracy of the simulated temperatures is within 4 % compared to the measurements. Finally, a 3D thermomechanical stress distribution map has been obtained for the simplified model of the demonstrator.

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