A Data-Driven Approach for Predicting Remaining Useful Life of Semiconductor Devices Based on Machine Learning and Synthetic Data Generation: A Review and Case Study on SiC MOSFETsShow others and affiliations
2025 (English)In: IEEE Access, E-ISSN 2169-3536, Vol. 13, p. 138834-138850
Article in journal (Refereed) Published
Abstract [en]
Predicting the remaining useful life of electronic components is a crucial aspect for predictive maintenance and system reliability across multiple fields and applications. Data-driven approaches, particularly those methods based on machine learning, are currently being used due to their ability to model complex degradation patterns without the need for explicit physical modeling. However, several challenges remain, including the availability and quality of data, as well as the uncertainty quantification of the results. To tackle these obstacles, this work explores the use of synthetic data for augmenting datasets, as well as feature selection and the assessment of different neural network architectures, including models with recurrent layers and probabilistic output. The proposed approach was evaluated on a silicon carbide metal-oxide-semiconductor field-effect transistor dataset. The best results for modeling the remaining useful life of these devices were obtained with a model trained on an augmented dataset that included synthetic data. This model’s probabilistic output allows building a confidence interval for the predictions, which is helpful to identify outliers. This model outperformed other state-of-the-art algorithms using only 4 out of 22 features, demonstrating the effectiveness of the feature selection procedure, the data augmentation method, and the neural network architecture for this case study.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2025. Vol. 13, p. 138834-138850
Keywords [en]
Machine learning, mixture density network, neural network, remaining useful life, silicon carbide metal-oxide-semiconductor field-effect transistor, synthetic data, Forecasting, Learning systems, MOS devices, MOSFET devices, Neural networks, Oxide semiconductors, Predictive maintenance, Semiconducting silicon, Semiconducting silicon compounds, Wide band gap semiconductors, Data-driven approach, Machine-learning, Metaloxide semiconductor field-effect transistor (MOSFETs), Mixture density, Neural-networks, On-machines, Remaining useful lives, Silicon carbide
National Category
Computer Sciences
Identifiers
URN: urn:nbn:se:ri:diva-79207DOI: 10.1109/ACCESS.2025.3596444Scopus ID: 2-s2.0-105013051145OAI: oai:DiVA.org:ri-79207DiVA, id: diva2:2016477
Note
Article; Granskad
This work was supported in part by the Project \u2018\u2018Digitalization of Power Electronic Applications within Key Technology Value Chains (PowerizeD)\u2019\u2019 under Grant 101096387; in part by Ministerio de Ciencia, Innovaci\u00F3n y Universidades (MICIU)/Agencia Estatal de Investigaci\u00F3n (AEI)/10.13039/501100011033 and European Union NextGenerationEU/Plan de Recuperaci\u00F3n, Transformaci\u00F3n y Resiliencia (PRTR) under Grant PCI2022-135004-2; in part by the Project \u2018\u2018Self Reconfiguration for Industrial Cyber-Physical Systems Based on Digital Twins and Artificial Intelligence. Methods and Application in Industry 4.0 Pilot Line\u2019\u2019 under Grant PID2021-127763OB-100; in part by MICIU, Spain; and in part by NextGenerationEU/PRTR.
2025-11-252025-11-252025-12-23Bibliographically approved