Theoretical Benchmarking of Vertical GaN Devices
2022 (English) In: International Conference on Electrical, Computer, Communications and Mechatronics Engineering, ICECCME 2022, Institute of Electrical and Electronics Engineers Inc. , 2022Conference paper, Published paper (Refereed)
Abstract [en]
In this paper theoretical benchmarking of semi-vertical and vertical gallium nitride (GaN) MOSFETs with rated voltage of 1.2 kV to 3.3 kV is performed against corresponding silicon carbide (SiC) devices. Specific design features and technology requirements for realization of high voltage vertical GaN MOSFETs are discussed and implemented in simulated structures. The main findings are that a) specific on-resistance of vertical GaN devices is expected to be 75% and 40% of that for 1.2 kV and 3.3 kV SiC MOSFETs, respectively, b) semi-vertical GaN do not offer any advantage over SiC MOSFETs for medium and high voltage devices (>1.0 kV), and c) vertical GaN has largest potential advantage for high and ultra-high voltage devices (>2.0 kV).
Place, publisher, year, edition, pages Institute of Electrical and Electronics Engineers Inc. , 2022.
Keywords [en]
benchmarking with SiC, device modeling, GaN, specific on-resistance, TCAD, vertical MOSFET, WBG devices, Benchmarking, Electronic design automation, III-V semiconductors, MOSFET devices, Silicon carbide, Wide band gap semiconductors, Benchmarking with silicon carbide, Device modelling, High voltage devices, MOSFETs, Rated voltages, Silicon carbide MOSFETs, Specific-on-resistance, Vertical MOSFETs, WBG device, Gallium nitride
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers URN: urn:nbn:se:ri:diva-64011 DOI: 10.1109/ICECCME55909.2022.9987919 Scopus ID: 2-s2.0-85146423232 ISBN: 9781665470957 (electronic) OAI: oai:DiVA.org:ri-64011 DiVA, id: diva2:1738664
Conference 2022 International Conference on Electrical, Computer, Communications and Mechatronics Engineering, ICECCME 2022, 16 November 2022 through 18 November 2022
Note Funding details: Electronic Components and Systems for European Leadership, ECSEL, 826392; Funding text 1: This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 826392 (UltimateGaN).
2023-02-222023-02-222025-09-23 Bibliographically approved