Comparison of thermal stress during short-circuit in different types of 1.2 kV SiC transistors based on experiments and simulationsShow others and affiliations
2016 (English)In: Materials Science Forum, 2016, Vol. 897, p. 595-598Conference paper, Published paper (Refereed)
Abstract [en]
The temperature evolution during a short-circuit in the die of three different Silicon Carbide 1200-V power devices is presented. A transient thermal simulation was performed based on the reconstructed structure of commercially available devices. The location of the hottest point in the device is compared. Finally, the analysis supports the necessity to turn off short-circuit events rapidly in order to protect the device after a fault.
Place, publisher, year, edition, pages
2016. Vol. 897, p. 595-598
Keywords [en]
Bipolar junction transistor (BJT), Failure analysis, Junction field-effect transistor (JFET), Power MOSFET, Semiconductor device reliability, Short-circuit current, Silicon carbide (SiC), Widebandgap semiconductors
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-31105DOI: 10.4028/www.scientific.net/MSF.897.595Scopus ID: 2-s2.0-85020002693ISBN: 9783035710434 (print)OAI: oai:DiVA.org:ri-31105DiVA, id: diva2:1136547
Conference
11th European Conference on Silicon Carbide and Related Materials (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017-08-282017-08-282025-09-23Bibliographically approved