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Fully printed ultrathin embedded electronics package for wide band gap power semiconductor devices using multimaterial inkjet additive manufacturing
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.ORCID iD: 0000-0002-3548-547X
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.ORCID iD: 0000-0002-5027-3491
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.ORCID iD: 0009-0008-1972-0004
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2025 (English)In: Progress in Additive Manufacturing, ISSN 2363-9512, E-ISSN 2363-9520, Vol. 10, no 9, p. 7241-Article in journal (Refereed) Published
Abstract [en]

High-density electronics packaging requires fabrication of intricate conductive and dielectric features within a dense three-dimensional structure. Simultaneous deposition of both conductive and insulative printing materials using multimaterial additive manufacturing (AM) provides new opportunities to fabricate electronics packages with complex designs. This article reports the first demonstration of fully printed power die-embedded electronics package for wide band-gap devices. For this purpose, multimaterial inkjet AM was used to print a 0.5-mm thick electronics package for gallium nitride (GaN) power chips. The conductive parts of the package, including traces and vias, were printed using a high electrical conductivity silver ink, while a polyimide ink was used to print dielectric parts. The electrical characterization tests showed the reasonable performance of the printed package. While the conventional embedded packaging includes many steps such as laminating, plating, and drilling, which creates significant material waste and environmental issues, the proposed AM approach is done in a single step without material waste. 

Place, publisher, year, edition, pages
Springer Science and Business Media Deutschland GmbH , 2025. Vol. 10, no 9, p. 7241-
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-78429DOI: 10.1007/s40964-025-01040-5Scopus ID: 2-s2.0-105000388103OAI: oai:DiVA.org:ri-78429DiVA, id: diva2:1998686
Note

This work was funded by European Union’s Horizon 2020 research and innovation programme (UltimateGaN project, grant agreement No 826392), and Future Power Electronics Project (the ICT- Sweden).

Available from: 2025-09-17 Created: 2025-09-17 Last updated: 2026-02-27Bibliographically approved

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Akbari, SaeedKostov, Konstantin StoychevLim, Jang-KwonKrishna Murthy, HithikshaBakowski, MietekAndersson, DagBrinkfeldt, Klas

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Akbari, SaeedKostov, Konstantin StoychevLim, Jang-KwonKrishna Murthy, HithikshaBakowski, MietekAndersson, DagBrinkfeldt, Klas
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Electrical Engineering, Electronic Engineering, Information Engineering

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