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Electrocodeposition of nano-SiC particles by pulse-reverse under an adapted waveform
Jönköping University, Sweden.
RISE - Research Institutes of Sweden, Säkerhet och transport, Elektronik. Jönköping University, Sweden.ORCID-id: 0000-0002-7095-1907
Jönköping University, Sweden.
2019 (engelsk)Inngår i: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 166, nr 15Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

This work has explored the potential of using pulse reverse (PR) plating for increasing the deposited fraction of SiC nanoparticles. Two PR waveforms were selected, a short pulse (500 Hz) waveform and a newly modified and adapted pulsed sequence that equals the plating thickness to the particles’ diameter (50 nm) for the on-time and half-diameter during the anodic time. The pulse waveforms were designed with 4 and 10 A•dm−2 as the average current density and cathodic peak current density, respectively. Direct current (DC) deposits at the same values were also produced as reference. In all cases, the codeposition of nano-SiC particles influenced the microstructure. The electroplating under DC 10 A•dm−2 showed the strongest grain refinement and increased the content of the particles (up to 2% vol.) PR using high-frequency achieved a similar codeposition. The maximum particle incorporation was achieved by the proposed adapted pulse waveform, doubling the SiC content produced by other set-ups (up to 4% vol.); increasing the microhardness of the deposits to 400 HV, despite no grain refinement compared to the pure metal. From these results, it was observed a relationship between the influence of the plating method on the microstructure, the particle content, and the material’s hardness. 

sted, utgiver, år, opplag, sider
Electrochemical Society Inc. , 2019. Vol. 166, nr 15
Emneord [en]
Deposits, Grain refinement, Grain size and shape, HVDC power transmission, Microstructure, Silicon carbide, Average current densities, Electrocodeposition, High frequency HF, Nano SiC particles, Particle content, Plating thickness, Pulse waveforms, SiC nanoparticles, Silicon compounds
HSV kategori
Identifikatorer
URN: urn:nbn:se:ri:diva-42368DOI: 10.1149/2.0441915jesScopus ID: 2-s2.0-85076115008OAI: oai:DiVA.org:ri-42368DiVA, id: diva2:1380978
Tilgjengelig fra: 2019-12-19 Laget: 2019-12-19 Sist oppdatert: 2025-09-23bibliografisk kontrollert

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