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  • 301.
    Konstantinou, Maria Georgia
    et al.
    Foundation for Research and Technology – Hellas, Greece; National Technical University of Athens, Greece.
    Milenko, Karolina
    Foundation for Research and Technology – Hellas, Greece.
    Kosma, Kyriaki
    Foundation for Research and Technology – Hellas, Greece.
    Margulis, Walter
    RISE., Swedish ICT, Acreo.
    Pissadakis, Stavros
    Foundation for Research and Technology – Hellas, Greece.
    Light coupling and routing using a microsphere attached on the endface of a microstructured optical fiber2016Ingår i: Proceedings of SPIE: Micro-Structured and Specialty Optical Fibres IV, 2016, Vol. 9886, artikel-id 98860IKonferensbidrag (Refereegranskat)
    Abstract [en]

    Herein, we demonstrated a T-shaped whispering gallery modes (WGMs) excitation system including a tapered single mode fiber (SMF), a tapered microstructured optical fiber (MOF) and a BaTiO3 microsphere for efficient light coupling and routing between the two fibers. The BaTiO3 microsphere is semi-immersed into the capillary of a tapered MOF, while the tapered SMF is placed perpendicularly to MOF in a contact with equatorial region of the microsphere. Based on that, three channels joined by the microsphere are formed, and excitation and measurement of WGMs is possible either using the SMF or the MOF taper. The measured WGMs spectra reveal light routing along Q-factors between 4500 and 6100, along with scattering signal with all three fiber ports and parities.

  • 302.
    Kostov, K S
    et al.
    RISE., Swedish ICT, Acreo.
    Nee, H-P
    Combining Diagonal Connection Cancellation Turn in Electromagnetic Interference Filtering2014Ingår i: IET Power Electronics, Vol. 7, nr 3, s. 559-Artikel i tidskrift (Refereegranskat)
  • 303.
    Kostov, Konstantin Stoychev
    et al.
    RISE., Swedish ICT, Acreo.
    Lim, Jang Kwon
    RISE., Swedish ICT, Acreo.
    Zhang, Yafan Fan
    RISE., Swedish ICT, Acreo.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Impact of package parasitics on switching performance2016Ingår i: Materials Science Forum, 2016, Vol. 858, s. 1057-1060Konferensbidrag (Refereegranskat)
    Abstract [en]

    The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.

  • 304.
    Kostov, Konstantin Stoychev
    et al.
    RISE., Swedish ICT, Acreo.
    Schroth, Sebastian
    ETH Zurich, Switzerland.
    Krismer, Florian
    ETH Zurich, Switzerland.
    Priecinsky, Martin
    Bel Power Solutions, Slovakia.
    Nee, Hans-Peter
    KTH Royal Institute of Technology, Sweden.
    Kolar, Johann W.
    ETH Zurich, Switzerland.
    The Input Impedance of Common-Mode Differential-Mode Noise Separators2015Ingår i: IEEE transactions on industry applications, ISSN 0093-9994, E-ISSN 1939-9367, Vol. 51, nr 3, s. 2352-2360, artikel-id 6954393Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This paper discusses the Δ-networks and other circuits designed to separate the conducted electromagnetic interference (EMI) into its common mode (CM) and differential mode (DM) components. The input impedances of CM/DM separators must be 50 Ω resistive in the measurement frequency range, and they must be independent of the values of the noise signals and noise source impedances. The conditions for achieving such input impedances are derived. It is shown that many of the proposed separators, including the Δ-network suggested in the International Special Committee on Radio Interference (CISPR) 16-1-2 standard, do not fulfill the input impedance requirement. This leads to unreliable CM and DM measurements and, consequently, to the oversizing of EMI filters and design by trial and error.

  • 305.
    Kothandaraman, Babu
    et al.
    KTH Royal Institute of Technology, Sweden.
    Du, Manxing
    RISE., Swedish ICT, Acreo.
    Sköldstrom, Pontus
    RISE., Swedish ICT, Acreo.
    Centrally controlled distributed VNF state management2015Ingår i: Proceedings of the 2015 ACM SIGCOMM Workshop on Hot Topics in Middleboxes and Network Function Virtualization (HotMiddlebox '15), 2015, s. 37-42Konferensbidrag (Refereegranskat)
    Abstract [en]

    The realization of increased service flexibility and scalability through the combination of Virtual Network Functions (VNF) and Software Defined Networks (SDN) requires careful management of both VNF and forwarding state. Without coordination, service scalability comes at a high cost due to unacceptable levels of packet loss, reordering and increased latencies. Previously developed techniques has shown that these issues can be managed, at least in scenarios with low traffic rates and optimistic control plane latencies. In this paper we extend previous work on coordinated state management in order to remove performance bottlenecks, this is done through distributed state management and minimizing control plane interactions. Evaluation of our changes show substantial performance gains using a distributed approach while maintaining centralized control.

  • 306.
    Krozer, A
    RISE., Swedish ICT, Acreo, Sensor Systems.
    Strategies for the Development of Biosensors – Few Examples2013Ingår i: Proceedings of 7 th International Conference on the Commercialization of Micro and Nano Systems, pp. 491-494, Sept 8-12, Ypsilanti, Michigan USA, 2013, s. 491-494Konferensbidrag (Refereegranskat)
  • 307.
    Kumari, Monika
    et al.
    ETH Zurich, Switzerland.
    Hirt, Ann
    ETH Zurich, Switzerland.
    Uebe, Rene
    Ludwig Maximilian University of Munich, Germany; University of Bayreuth, Germany.
    Schuler, Dirk
    Ludwig Maximilian University of Munich, Germany; University of Bayreuth, Germany.
    Tompa, Eva
    University of Pannonia, Hungary.
    Mihaly Posfai, Mihaly
    University of Pannonia, Hungary.
    Lorenz, Wolfram
    ETH Zurich, Switzerland.
    Ahrentorp, Fredrik
    RISE., Swedish ICT, Acreo.
    Jonasson, Christian
    RISE., Swedish ICT, Acreo.
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    Experimental mixtures of superparamagnetic single domain magnetite with respect to Day-Dunlop plots2015Ingår i: Geochemistry Geophysics Geosystems, ISSN 1525-2027, E-ISSN 1525-2027, Vol. 16, nr 6, s. 1739-1752Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Day‐Dunlop plots are widely used in paleomagnetic and environmental studies as a tool to determine the magnetic domain state of magnetite, i.e., superparamagnetic (SP), stable single‐domain (SD), pseudosingle‐domain (PSD), multidomain (MD), and their mixtures. The few experimental studies that have examined hysteresis properties of SD‐SP mixtures of magnetite found that the ratios of saturation remanent magnetization to saturation magnetization and the coercivity of remanence to coercivity are low, when compared to expected theoretical mixing trends based on Langevin theory. This study reexamines Day‐Dunlop plots using experimentally controlled mixtures of SD and SP magnetite grains. End‐members include magnetotactic bacteria (MSR‐1) as the SD source, and a commercial ferrofluid or magnetotactic bacteria (ΔA12) as the SP source. Each SP‐component was added incrementally to a SD sample. Experimental results from these mixing series show that the magnetization and coercivity ratios are lower than the theoretical prediction for bulk SP magnetic size. Although steric repulsion was present between the particles, we cannot rule out interaction in the ferrofluid for higher concentrations. The SP bacteria are noninteracting as the magnetite was enclosed by an organic bilipid membrane. Our results demonstrate that the magnetization and coercivity ratios of SD‐SP mixtures can lie in the PSD range, and that an unambiguous interpretation of particle size can only be made with information about the magnetic properties of the end‐members.

  • 308.
    Lago, L.
    et al.
    Multitel ASBL, Belgium.
    Corbari, C.
    University of Southampton, UK.
    Gladyshev, A. V.
    Fibre Optics Research Center, Russia.
    Kazansky, P. G.
    University of Southampton, UK.
    Tarasenko, O.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Margulis, Walter
    RISE., Swedish ICT, Acreo.
    Hernandez, Y.
    Multitel ASBL, Belgium.
    Specialty fibres and components for advanced microscopy2014Ingår i: Specialty Optical Fibers, SOF 2014, 2014Konferensbidrag (Refereegranskat)
    Abstract [en]

    We investigate fibre basic functions like SHG and pulse gating. We achieved 5.2% conversion efficiency into green light with 50 W peak pump power and demonstrated in-fibre pulse gating at 1 MHz repetition rate. © 2014 OSA.

  • 309.
    Lang, Jenny
    et al.
    RISE., SP – Sveriges Tekniska Forskningsinstitut, SP Elektronik.
    Belov, Ilia
    Jönköping University, Sweden.
    Hellén, Johan
    Saab AB, Sweden.
    Lim, Jang-Kwon
    RISE., Swedish ICT, Acreo.
    Schødt, Bo
    RISE., SP – Sveriges Tekniska Forskningsinstitut.
    Nilsson, Torbjörn M. J.
    Saab AB, Sweden.
    Poder, Ralf
    RISE., SP – Sveriges Tekniska Forskningsinstitut, SP Elektronik.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Leisner, Peter
    RISE - Research Institutes of Sweden, Säkerhet och transport, Elektronik. Jönköping University, Sweden.
    Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with GaN-on-SiC HEMTs2016Ingår i: Materials Science Forum, 2016, Vol. 897, nr May, s. 715-718Konferensbidrag (Refereegranskat)
    Abstract [en]

    RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015AQEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn63Pb36Ag2 and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermomechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed. 

  • 310.
    Lang, Jenny
    et al.
    RISE., SP – Sveriges Tekniska Forskningsinstitut.
    Lim, Jang-Kwon
    RISE., Swedish ICT, Acreo.
    Hellén, Johan
    Saab AB, Sweden.
    Nilsson, Torbjörn M. J.
    Saab AB, Sweden.
    Schodt, Bo
    RISE., SP – Sveriges Tekniska Forskningsinstitut.
    Poder, Ralf
    RISE., SP – Sveriges Tekniska Forskningsinstitut.
    Belov, Ilja
    Jönköping University, Sweden.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Leisner, Peter
    RISE., SP – Sveriges Tekniska Forskningsinstitut.
    Reliability study of a RF power amplifier with GaN-on-SiC HEMTs2016Ingår i: ECS Transactions, 2016, Vol. 75, nr 12, s. 49-59Konferensbidrag (Refereegranskat)
    Abstract [en]

    RF power amplifier demonstrators containing each one GaN-on- SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat noleads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and evaluated electrically, thermally and structurally. Two types of lead-free solders (Sn63Pb36Ag2 and SnAgCu (SAC305)) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.

  • 311.
    Larsen, CP
    RISE., Swedish ICT, Acreo.
    Wavelength switches the automated optical network -status outlook2005Ingår i: Telektronikk, Vol. 101, nr 2, s. 81-86Artikel i tidskrift (Refereegranskat)
  • 312. Larsen, CP
    et al.
    Mattsson, Ö
    Jacobsen, G
    RISE., Swedish ICT, Acreo, Broadband Technology.
    FTTH - the Swedish Perspective2006Ingår i: Ch3 in Broadband Optical Access Networks and Fiber-to-the-Home: Systems Technologies and Deployment Strategies, pp. 43-67. Ed. Lin, C.; ISBN 978-0-470-09478-5; John Wiley and Sons Ltd, West Sussex, England. 2006., 2006Kapitel i bok, del av antologi (Övrigt vetenskapligt)
  • 313. Laulajainen, J. -P
    et al.
    Arvidsson, A.
    Ojala, T.
    Seppanen, J.
    Du, M.
    RISE., Swedish ICT, Acreo.
    Study of YouTube demand patterns in mixed public and campus WiFi network2014Ingår i: IWCMC 2014 - 10th International Wireless Communications and Mobile Computing Conference, 2014, s. 635-641Konferensbidrag (Refereegranskat)
    Abstract [en]

    In this paper we study traffic patterns in a large municipal WiFi network and in particular those of the most bandwidth hungry application, viz. YouTube, for which we provide a detailed analysis of demand in different geographical areas and over time. We consider the possibilities to reduce network traffic and increase Quality of Experience (QoE) by serving repeated requests for YouTube videos from caches placed either at the network head end, at the wireless access points, or in the user devices. Our data confirms that a significant part of the YouTube traffic can be served by such devices and that there exists a potential to optimize caching performance by exploiting the content demand locality. We also discover a previously unknown pattern of periodicity in content demand and present a simple example of how to exploit this in cache design

  • 314. Lebedev, A
    et al.
    Vegas Olmos, JJ
    Pang, X
    RISE., Swedish ICT, Acreo.
    Tafur Monroy, I
    Larsen, K
    Forchhammer, S
    Low complexity source channel coding for mm-wave hybrid fiber-wireless links2014Ingår i: Optics Communications, ISSN 0030-4018, E-ISSN 1873-0310, Vol. 318, s. 142-Artikel i tidskrift (Refereegranskat)
  • 315. Lee, Y
    et al.
    Bernstein, G
    Mårtensson, J
    RISE., Swedish ICT, Acreo.
    Takeda, T
    Tsuritani, T
    Gonzalez de Dios, O
    Path Computation Element Communication Protocol (PCEP) Requirements for Wavelength Switched Optical Network (WSON) Routing and Wavelength Assignment2015Övrigt (Övrigt vetenskapligt)
  • 316.
    Leong, M. Y.
    et al.
    RISE - Research Institutes of Sweden, ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Jacobsen, G.
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Popov, S.
    KTH Royal Institute of Technology, Sweden.
    Sergeyev, S.
    Aston University, UK.
    Receiver Sensitivity in Optical Microwave, Heterodyne Homodyne Systems2014Ingår i: Journal of optical communications, ISSN 0173-4911, E-ISSN 2191-6322, Vol. 35, nr 3, s. 221-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this paper, we analyze the sensitivities of coherent optical receivers and microwave receivers. We derive theoretical limits of signal-to-noise ratio and bit error rate. By applying a generic approach to a broad range of receivers, we can compare their performance directly. Other publications have considered some of these receivers. However, their diverse nature obscures the big picture. Using our results as a unifying platform, previous publications can be compared and discrepancies between them identified. 

  • 317.
    Leong, M. Y.
    et al.
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Larsen, K. J.
    DTU Technical University of Denmark, Denmark.
    Jacobsen, G.
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Popov, S.
    KTH Royal Institute of Technology, Sweden.
    Zibar, D.
    DTU Technical University of Denmark, Denmark.
    Sergeyev, S.
    Aston University, UK.
    Novel BCH code design for mitigation of phase noise induced cycle slips in DQPSK systems2014Ingår i: Conference on Lasers and Electro-Optics Europe - Technical Digest, 2014Konferensbidrag (Refereegranskat)
    Abstract [en]

    We show that by proper code design, phase noise induced cycle slips causing an error floor can be mitigated for 28 Gbaud DQPSK systems. Performance of BCH codes are investigated in terms of required overhead.

  • 318.
    Leong, M. Y.
    et al.
    RISE., Swedish ICT, Acreo.
    Larsen, K. J.
    DTU Technical University of Denmark, Denmark.
    Jacobsen, Gunnar
    RISE., Swedish ICT, Acreo.
    Popov, S.
    KTH Royal Institute of Technology, Sweden.
    Zibar, D.
    DTU Technical University of Denmark, Denmark.
    Sergeyev, S.
    Aston University, UK.
    Novel BCH code design for mitigation of phase noise induced cycle slips in DQPSK systems2014Ingår i: Optics InfoBase Conference Papers, 2014Konferensbidrag (Refereegranskat)
    Abstract [en]

    We show that by proper code design, phase noise induced cycle slips causing an error floor can be mitigated for 28 Gbaud DQPSK systems. Performance of BCH codes are investigated in terms of required overhead.

  • 319.
    Leong, Miu Yoong
    et al.
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Larsen, Knud J.
    DTU Technical University of Denmark, Denmark.
    Jacobsen, Gunnar
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Popov, Sergei
    KTH Royal Institute of Technology, Sweden.
    Zibar, Darko
    DTU Technical University of Denmark, Denmark.
    Sergeyev, Sergey
    Aston University, UK.
    Interleavers and BCH Codes for Coherent DQPSK Systems With Laser Phase Noise2015Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 27, nr 7, s. 685-688, artikel-id 6995992Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The relatively high phase noise of coherent optical systems poses unique challenges for forward error correction (FEC). In this letter, we propose a novel semianalytical method for selecting combinations of interleaver lengths and binary Bose-Chaudhuri-Hocquenghem (BCH) codes that meet a target post-FEC bit error rate (BER). Our method requires only short pre-FEC simulations, based on which we design interleavers and codes analytically. It is applicable to pre-FEC BER similar to 10(-3), and any post-FEC BER. In addition, we show that there is a tradeoff between code overhead and interleaver delay. Finally, for a target of 10(-5), numerical simulations show that interleaver-code combinations selected using our method have post-FEC BER around 2x target. The target BER is achieved with 0.1 dB extra signal-to-noise ratio.

  • 320. Leong, MY
    et al.
    Larsen, K
    Jacobsen, G
    RISE., Swedish ICT, Acreo.
    Popov, S
    Zibar, D
    Sergeyev, S
    Dimensioning BCH codes for coherent DQPSK systems with laser phase noise cycle slips2014Ingår i: IEEE transactions on intelligent transportation systems (Print), ISSN 1524-9050, E-ISSN 1558-0016, Vol. 32, nr 21, s. 4048-Artikel i tidskrift (Refereegranskat)
  • 321. Leong, MY
    et al.
    Larsen, K
    Jacobsen, G
    RISE., Swedish ICT, Acreo.
    Popov, S
    Zibar, D
    Sergeyev, S
    Interleavers BCH Codes for Coherent DQPSK Systems with Laser Phase Noise2014Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 27, nr 7, s. 685-Artikel i tidskrift (Refereegranskat)
  • 322. Levin, K
    et al.
    Matrat, J
    Gunnarsson, O
    RISE., Swedish ICT, Acreo.
    Evaluation of a High Sampling Rate Time-domain Multiplexing Fiber-optic Sensor System2003Ingår i: Structural Health Monitoring: An International Journal, Vol. 2, nr 2, s. 107-113Artikel i tidskrift (Refereegranskat)
  • 323.
    Li, J
    et al.
    RISE., Swedish ICT, Acreo.
    Andrekson, P A
    Bakshi, B
    Direct Generation of Subpicosecond Chirp-Free Pulses at 10 GHz from a Nonpolarization Maintaining Actively Mode-Locked Fiber Ring Laser2000Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 12, s. 1150-Artikel i tidskrift (Refereegranskat)
  • 324.
    Li, J
    et al.
    RISE., Swedish ICT, Acreo.
    Berntson, A
    RISE., Swedish ICT, Acreo.
    Jacobsen, G
    RISE., Swedish ICT, Acreo.
    Polarization-independent optical demultiplexing using XPM-induced wavelength shifting in highly nonlinear fiber2008Ingår i: IEEE Photonics Tech. Lett., Vol. 20, s. 691-93Artikel i tidskrift (Refereegranskat)
  • 325.
    Li, J
    et al.
    RISE., Swedish ICT, Acreo.
    Hansryd, J
    Hedekvist, P O
    Andrekson, P A
    300-Gb/s Eye-Diagram measurement by Optical Sampling Using Fiber-Based Parametric Amplification2001Ingår i: Photonics Technology Letter, Vol. 13, s. 978-89Artikel i tidskrift (Refereegranskat)
  • 326.
    Li, J
    et al.
    RISE., Swedish ICT, Acreo.
    Myren, N
    Margulis, W
    RISE., Swedish ICT, Acreo.
    Ortega, B
    Puerto, G
    Pastor, D
    Capmany, J
    Belmonte, M
    Pruneri, V
    Systems measurements of 2x2 poled fiber switch2005Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 17, nr 12, s. 2571-73Artikel i tidskrift (Refereegranskat)
  • 327.
    Li, J
    et al.
    RISE., Swedish ICT, Acreo.
    Olsson, B-E
    Karlsson, M
    Andrekson, P A
    OTDM Demultiplexer Based on XPM-Induced Wavelength Shifting in Highly Nonlinear Fiber2003Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 15, nr 12, s. 1770-72Artikel i tidskrift (Refereegranskat)
  • 328.
    Li, J
    et al.
    RISE., Swedish ICT, Acreo.
    Westlund, M
    Sunnerud, H
    Olsson, B-E
    Karlsson, M
    Andrekson, P A
    0.5 Tbit/s eye-diagram measurement by optical sampling using XPM-induced wavelength shifting in highly nonlinear fiber2004Ingår i: IEEE Photonics Technology Letters, ISSN 1041-1135, E-ISSN 1941-0174, Vol. 16, nr 2, s. 566-68Artikel i tidskrift (Refereegranskat)
  • 329.
    Lim, Jang-Kwon
    et al.
    RISE., Swedish ICT, Acreo, Nanoteknologi.
    Peftitsis, Dimosthenis
    KTH, Elektrisk energiomvandling.
    Rabkowski, Jacek
    KTH, Elektrisk energiomvandling.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo, Nanoteknologi.
    Nee, Hans-Peter
    KTH, Elektrisk energiomvandling.
    Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs2014Ingår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, nr 5, s. 2180-2191Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Operation of parallel-connected 4H-SiC vertical junction field effect transistors (VJFETs) from SemiSouth is modeled using numerical simulations and experimentally verified. The unbalanced current waveforms of parallel-connected VJFETs are investigated with respect to the spread in the critical parameters of the device structure and to the influence of the parasitic inductances in the measurement circuit. The device structures are reconstructed based on scanning electron microscopy (SEM) analysis, electrical characterization, and device simulations. The doping concentration and profile depth of a p-grid formed by angular implantation are studied as main contributors that influence the variation of the on-state characteristics, and the threshold voltage of the experimental devices. It has been shown elsewhere that similar differences in p-grid also lead to differences in gate-source breakdown voltage. The switching performance of the parallel-connected JFETs is measured using single and double gate drivers in a double-pulse test and compared with simulations. The switched current and voltage waveforms from measurements are reproduced in simulation by introducing the parasitics. From the analysis, it is found that reasonable differences in doping levels and profiles of the p-grid give rise to significant differences in device parameters. However, even with these parameter differences and circuit asymmetries, it is possible to successfully operate parallel-connected VJFETs of this type.

  • 330.
    Lim, Jang-Kwon
    et al.
    RISE., Swedish ICT, Acreo.
    Peftitsis, Dimosthenis
    KTH, Elektrisk energiomvandling.
    Rabkowski, Jacek
    KTH, Elektrisk energiomvandling.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Nee, Hans-Peter
    KTH, Elektrisk energiomvandling.
    Modeling of the impact of parameter spread on the switching performance of parallel-connected SiC VJFETs2013Ingår i: Materials Science Forum, Trans Tech Publications Inc. , 2013, s. 1098-1102Konferensbidrag (Refereegranskat)
    Abstract [en]

    Operation of parallel-connected 4H-SiC VJFETs from SemiSouth was measured and modeled using numerical simulations. The unbalanced current waveforms in parallel-connected VJFETs were related to spread in the critical parameters of the device structure and to the influence of the parasitic inductances in the measurement circuit. The physical device structure was reconstructed based on SEM analysis, electrical characterization, and device simulations. The two hypothetical critical design parameters that were studied with respect to spread were the p-gate doping profile (Case 1) and the emitter doping (Case 2). Variation in both parameters could be related to variation in the emitter breakdown voltage, the on-state characteristics, and the threshold voltage of the experimental devices. The switching performance of the parallel-connected JFETs was measured using a single gate driver in a double pulse test and compared with simulations. In both investigated cases a very good agreement between measurements and simulations was obtained. The modeling of the transient performance relies on good reproduction of transfer characteristics and circuit parasitics.

  • 331.
    Lim, Jang-Kwon
    et al.
    RISE., Swedish ICT, Acreo. KTH, Mikro- och nanosystemteknik.
    Peftitsis, Dimosthenis
    KTH, Skolan för elektro- och systemteknik (EES).
    Sadik, Diane-Perle
    KTH, Skolan för elektro- och systemteknik (EES).
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Nee, Hans-Peter
    KTH, Elektrisk energiomvandling.
    Evaluation of buried grid JBS diodes2014Ingår i: 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Trans Tech Publications Inc. , 2014, s. 804-807Konferensbidrag (Refereegranskat)
    Abstract [en]

    The 4H-SiC Schottky barrier diodes for high temperature operation over 200 °C have been developed using buried grids formed by implantation. Compared to a conventional JBS-type SBD with surface grid (SG), JBS-type SBD with buried grid (BG) has significantly reduced leakage current at reverse bias due to a better field shielding of the Schottky contact. By introducing the BG technology, the 1.7 kV diodes with an anode area 0.0024 cm2 (1 A) and 0.024 cm2 (10 A) were successfully fabricated, encapsulated in TO220 packages, and electrically evaluated. Two types of buried grid arrangement with different grid spacing dimensions were investigated. The measured IV characteristics were compared with simulation. The best fit was obtained with an active area of approximately 60% and 70% of the anode area in large and small devices, respectively. The measured values of the device capacitances were 1000 pF in large devices and 100 pF in small devices at zero bias. The capacitance values are proportional to the device area. The recovery behavior of big devices was measured in a double pulse tester and simulated. The recovery charge, Qc, was 18 nC and 24 nC in simulation and measurement, respectively. The fabricated BG JBS-type SBDs have a smaller maximum reverse recovery current compared to the commercial devices. No influence of the different grid spacing on the recovery charge was observed.

  • 332.
    Lim, Jang-Kwon
    et al.
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Reshanov, Sergey A.
    Ascatron AB, Sweden.
    Kaplan, Wlodek
    Ascatron AB, Sweden.
    Zhang, Andy Zhenzhong
    Ascatron AB, Sweden.
    Hjort, Tomas
    Ascatron AB, Sweden.
    Schöner, Adolf
    Ascatron AB, Sweden.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Nee, Hans-Peter
    KTH Royal Institute of Technology, Sweden.
    Temperature-dependent characteristics of 4H-SiC buried grid JBS diodes2015Ingår i: Materials Science Forum, 2015, Vol. 821-823, s. 600-603Konferensbidrag (Refereegranskat)
    Abstract [en]

    4H-SiC Schottky Barrier Diodes (SBD) have been developed using p-type buried grids (BGs) formed by Al implantation. In order to reduce on-state resistance and improve forward conduction, the doping concentration of the channel region between the buried grids was increased. The fabricated diodes were encapsulated with TO-254 packages and electrically evaluated. Experimental forward and reverse characteristics were measured in the temperature range from 25 °C to 250 °C. On a bare die level, the forward voltage drop was reduced from 5.36 V to 3.90 V at 20 A as the channel doping concentration was increased in order to reduce the channel resistance. After encapsulation in a TO-254 package, the forward voltage drop was decreased by approximately 10% due to a lower contact resistance. The on-state resistance of an identical device measured on the bare die and in the TO-254 package increased with increasing temperature due to the decreased electron mobility in the drift region resulting in higher resistance. The incremental contact resistances of the bare dies were larger than in the packaged devices. One key issue associated with conventional Junction Barrier Schottky (JBS) diodes is a high leakage current at high temperature operation over 200 °C. The developed Buried Grid JBS (BG JBS) diode has significantly reduced leakage current due to a better field shielding at the Schottky contact. The leakage current of the packaged BG JBS diodes is compared to conventional SBD and commercial JBS diodes.

  • 333.
    Lim, Jang-Kwon
    et al.
    RISE., Swedish ICT, Acreo.
    Åstlund, Ludwig
    Wang, Qin
    RISE., Swedish ICT, Acreo.
    Kaplan, Wlodek
    Reshanov, SA
    Schöner, Adolf
    Bakwoski, Mietek
    Nee, H-P
    A theoretical experimental comparison of 4H- 6H-SiC MSM UV photodetectors2012Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 717-720, s. 1207-10Artikel i tidskrift (Refereegranskat)
  • 334.
    Lim, Jang-Kwon
    et al.
    RISE., Swedish ICT, Acreo. KTH, Elektrisk energiomvandling.
    Östlund, Ludwig
    RISE., Swedish ICT, Acreo.
    Wang, Qin
    RISE., Swedish ICT, Acreo.
    Kaplan, Wlodek
    RISE., Swedish ICT, Acreo.
    Reshanov, Sergey A.
    RISE., Swedish ICT, Acreo.
    Schöner, Adolf
    RISE., Swedish ICT, Acreo.
    Bakowski, Mietek
    RISE., Swedish ICT, Acreo.
    Nee, Hans-Peter
    RISE., Swedish ICT, Acreo. KTH, Elektrisk energiomvandling.
    A theoretical and experimental comparison of 4H- and 6H-SiC MSM UV photodetectors2012Ingår i: Silicon Carbide and Related Materials 2011, Trans Tech Publications Inc. , 2012, s. 1207-1210Konferensbidrag (Refereegranskat)
    Abstract [en]

    This paper reports on fabrication and modeling of 4H- and 6H-SiC metal-semiconductor-metal (MSM) photodetectors (PDs). MSM PDs have been fabricated on 4H-SiC and 6H-SiC epitaxial layers, and their performance analyzed by MEDICI simulation and measurements. The simulations were also used to optimize the sensitivity by varying the width and spacing of the interdigitated electrodes. The fabricated PDs with 2 ÎŒm wide metal electrodes and 3 ÎŒm spacing between the electrodes exhibited, under UV illumination, a peak current to dark current ratio of 10 5 and 10 4 in 4H-SiC and 6H-SiC, respectively. The measured spectral responsivity of 6H-SiC PDs was higher compared to that of 4H-SiC PDs, with a cutoff at 407 nm compared to 384 nm in 4H-SiC PDs. Also the peak responsivity occurred at a shorter wavelength in 6H material. A high rejection ratio between the photocurrent and dark current was found in both cases. These experimental results were in agreement with simulation.

  • 335.
    Lim, J-K
    et al.
    RISE., Swedish ICT, Acreo.
    Bakowski, M
    RISE., Swedish ICT, Acreo.
    Nee, H-P
    Design gate drive considerations for epitaxial 1.2kV buried grid N-on N-off JFETs for operation at 250C2010Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, s. 961-Artikel i tidskrift (Refereegranskat)
  • 336.
    Lim, J-K
    et al.
    RISE., Swedish ICT, Acreo.
    Peftitsis, D.
    KTH Royal Institute of Technology, Sweden.
    Peftitsis Sadik, D-P
    KTH Royal Institute of Technology, Sweden.
    Bakowski, M
    RISE., Swedish ICT, Acreo.
    Nee, H-P
    KTH Royal Institute of Technology, Sweden.
    Evaluation of buried grid JBS diode2014Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, s. 804-807Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The 4H-SiC Schottky barrier diodes for high temperature operation over 200 °C have been developed using buried grids formed by implantation. Compared to a conventional JBS-type SBD with surface grid (SG), JBS-type SBD with buried grid (BG) has significantly reduced leakage current at reverse bias due to a better field shielding of the Schottky contact. By introducing the BG technology, the 1.7 kV diodes with an anode area 0.0024 cm2 (1 A) and 0.024 cm2 (10 A) were successfully fabricated, encapsulated in TO220 packages, and electrically evaluated. Two types of buried grid arrangement with different grid spacing dimensions were investigated. The measured IV characteristics were compared with simulation. The best fit was obtained with an active area of approximately 60% and 70% of the anode area in large and small devices, respectively. The measured values of the device capacitances were 1000 pF in large devices and 100 pF in small devices at zero bias. The capacitance values are proportional to the device area. The recovery behavior of big devices was measured in a double pulse tester and simulated. The recovery charge, Qc, was 18 nC and 24 nC in simulation and measurement, respectively. The fabricated BG JBS-type SBDs have a smaller maximum reverse recovery current compared to the commercial devices. No influence of the different grid spacing on the recovery charge was observed.

  • 337.
    Lim, J-K.
    et al.
    RISE., Swedish ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Peftitsis, D.
    KTH Royal Institute of Technology, Sweden.
    Rabkowski, J.
    Warsaw University of Technology, Poland; KTH Royal Institute of Technology, Sweden.
    Bakowski, M.
    RISE., Swedish ICT, Acreo.
    Nee, H-P.
    KTH Royal Institute of Technology, Sweden.
    Analysis experimental verification of the influence of fabrication process tolerances circuit parasitic on transient current sharing of parallel-connected SiC JFETs2014Ingår i: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, nr 5, s. 2180-91Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Operation of parallel-connected 4H-SiC vertical junction field effect transistors (VJFETs) from SemiSouth is modeled using numerical simulations and experimentally verified. The unbalanced currentwaveforms of parallel-connected VJFETs are investigated with respect to the spread in the critical parameters of the device structure and to the influence of the parasitic inductances in the measurement circuit. The device structures are reconstructed based on scanning electron microscopy (SEM) analysis, electrical characterization, and device simulations. The doping concentration and profile depth of a p-grid formed by angular implantation are studied as main contributors that influence the variation of the on-state characteristics, and the threshold voltage of the experimentaldevices. It has been shown elsewhere that similar differences in p-grid also lead to differences in gate-source breakdown voltage. The switching performance of the parallel-connected JFETs is measured using single and double gate drivers in a double-pulse test and compared with simulations. The switched current and voltage waveforms from measurements are reproduced in simulation by introducing the parasitics. From the analysis, it is found that reasonable differences in doping levels and profiles of the p-grid give rise to significant differences in device parameters. However, even with these parameter differences and circuit asymmetries, it is possible to successfully operate parallel-connected VJFETs of this type.

  • 338.
    Lim, J-K
    et al.
    RISE., Swedish ICT, Acreo.
    Peftitsis, D
    Rabkowski, J
    Bakowski, M
    RISE., Swedish ICT, Acreo.
    Nee, H-P
    Modeling of the impact of parameter spread on the switching performance of parallel-connected SiC VJFETs2013Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, s. 1098-102Artikel i tidskrift (Refereegranskat)
  • 339. Lim, J-K
    et al.
    Tolstoy, G
      Peftitsis, D
    Rabkowski, J
    Bakowski, M
    RISE., Swedish ICT, Acreo.
    Nee, H-P
    Comparison of total losses of 1.2kV SiC JFET BJT in DC-DC converter including gate driver2011Ingår i: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 679-80, s. 649-52Artikel i tidskrift (Refereegranskat)
  • 340.
    Lin, Rui
    et al.
    KTH Royal Institute of Technology, Sweden; Huazhong University of Science and Technology, China.
    Pang, Xiaodan
    RISE., Swedish ICT, Acreo.
    Ozolins, Oskars
    RISE., Swedish ICT, Acreo.
    Feng, Zhenhua
    Huazhong University of Science and Technology, China.
    Djupsjöbacka, Anders
    RISE., Swedish ICT, Acreo.
    Westergren, Urban
    KTH Royal Institute of Technology, Sweden.
    Schatz, Richard
    KTH Royal Institute of Technology, Sweden.
    Jacobsen, Gunnar
    RISE., Swedish ICT, Acreo.
    Tang, Ming
    Huazhong University of Science and Technology, China.
    Fu, Songnian
    Huazhong University of Science and Technology, China.
    Liu, Deming
    Huazhong University of Science and Technology, China.
    Popov, Sergei
    KTH Royal Institute of Technology, Sweden.
    Chen, Jiajia
    KTH Royal Institute of Technology, Sweden.
    Performance evaluation of PAM and DMT for short-range optical transmission with high speed InGaAsP DFB-TWEAM2016Ingår i: 2016 Optical Fiber Communications Conference and Exhibition (OFC), 2016, artikel-id 7537397Konferensbidrag (Refereegranskat)
    Abstract [en]

    We report on experimental results of 56-Gb/s OOK, PAM4 and 25-Gb/s DMT transmission with a high speed InGaAsP based monolithically integrated DFB-TWEAM, and evaluate different digital equalization implementations.

  • 341. Liu, J
    et al.
    Herlogsson, L
    Sawatdee, A
    RISE., Swedish ICT, Acreo.
    Favia, P
    Sandberg, Mats
    RISE., Swedish ICT, Acreo.
    Crispin, X
    Engquist, I
    Berggren, M
    Vertical Polyelectrolyte-Gated Organic Field-Effect Transistors2010Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, s. 103303-Artikel i tidskrift (Refereegranskat)
  • 342. Liuolia, V
    et al.
    Marcinkevicius, S
    Wang, Qin
    RISE., Swedish ICT, Acreo.
    Andersson, Jan Y
    RISE., Swedish ICT, Acreo.
    Kim, S M
    Baek, J H
    Near- and far-field optical characterization of InGaN photonic crystal light emitting diodes2012Ingår i: Phys. Status Solid, Vol. 9, nr 7, s. 1664-6Artikel i tidskrift (Refereegranskat)
  • 343.
    Lopez, Victor
    et al.
    Telefónica I+D/GCTO, Spain.
    Gran, Jose Manuel
    Telefónica I+D/GCTO, Spain.
    Fernandez-Palacios, Juan Pedro
    Telefónica I+D/GCTO, Spain.
    Siracusa, Domenico
    CREATE-NET, Italy.
    Pederzolli, Federico
    CREATE-NET, Italy.
    Gerstel, Ori
    Sedona Systems, Israel.
    Shikhmanter, Yona
    Sedona Systems, Israel.
    Mårtensson, Jonas
    RISE., Swedish ICT, Acreo.
    Sköldström, Pontus
    RISE., Swedish ICT, Acreo.
    Szyrkowiec, Thomas
    ADVA Optical Networking, Germany.
    Chamania, Mohit
    ADVA Optical Networking, Germany.
    Autenrieth, Achim
    ADVA Optical Networking, Germany.
    Tomkos, Ioannis
    AIT Athens Information Technology, Greece.
    Klonidis, Dimitrios
    AIT Athens Information Technology, Greece.
    The role of SDN in Application Centric IP and Optical Networks2016Ingår i: 2016 European Conference on Networks and Communications (EuCNC), IEEE, 2016, s. 138-142, artikel-id 7561020Konferensbidrag (Refereegranskat)
    Abstract [en]

    Transport IP/optical networks are evolving in capacity and dynamicity configuration. This evolution gives little to no attention to the specific needs of applications, beyond raw capacity. The ACINO concept is based on facilitating applications to explicitly specify requirements for requested services in terms of high-level (technology agnostic) requirements such as maximum latency or reliability. These requirements are described using intents and certain primitives which facilitate translation to technology specific configuration within the ACINO infrastructure. To support this application centric approach, SDN must have a key role in this evolution. There are representative use cases where SDN gives an added value when considering not only the network but also the application layer.

  • 344.
    Ludwig, F.
    et al.
    Technische Universität Braunschweig, Germany.
    Kazakova, O.
    National Physical Laboratory, UK.
    Barquin, L. F.
    University of Cantabria, Spain.
    Fornara, A.
    RISE., SP – Sveriges Tekniska Forskningsinstitut.
    Trahms, L.
    Physikalisch-Technische Bundesanstalt, Germany.
    Steinhoff, U.
    Physikalisch-Technische Bundesanstalt, Germany.
    Svedlindh, P.
    Uppsala University, Sweden.
    Wetterskog, E
    Uppsala University, Sweden.
    Pankhurst, Q. A.
    University College of London, UK.
    Southern, P.
    University College of London, UK.
    Morales, P.
    University of Cantabria, Spain.
    Hansen, M. F.
    DTU Technical University of Denmark, Denmark.
    Frandsen, C.
    DTU Technical University of Denmark, Denmark.
    Olsson, E.
    Chalmers University of Technology, Sweden.
    Gustafsson, S.
    Chalmers University of Technology, Sweden.
    Gehrke, N.
    NanoPET Pharma GmbH, Germany.
    Ludtke-Buzug, K.
    University of Lübeck, Germany.
    Gruttner, C.
    Micromod Partikeltechnologie GmbH, Germany.
    Jonasson, Christian
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    Magnetic, Structural, Particle Size Analysis of Single- Multi-Core Magnetic Nanoparticles2014Ingår i: IEEE transactions on magnetics, ISSN 0018-9464, E-ISSN 1941-0069, Vol. 50, nr 11, s. 5300204-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We have measured and analyzed three different commercial magnetic nanoparticle systems, both multi-core and single-core in nature, with the particle (core) size ranging from 20 to 100 nm. Complementary analysis methods and same characterization techniques were carried out in different labs and the results are compared with each other. The presented results primarily focus on determining the particle size - both the hydrodynamic size and the individual magnetic core size - as well as magnetic and structural properties. The used analysis methods include transmission electron microscopy, static and dynamic magnetization measurements, and Mössbauer spectroscopy. We show that particle (hydrodynamic and core) size parameters can be determined from different analysis techniques and the individual analysis results agree reasonably well. However, in order to compare size parameters precisely determined from different methods and models, it is crucial to establish standardized analysis methods and models to extract reliable parameters from the data. 

  • 345.
    Lund, A.
    et al.
    University of Borås, Sweden.
    Jonasson, Christian
    RISE., Swedish ICT, Acreo.
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    Haagensen, D.
    Chalmers University of Technology, Sweden.
    Hagström, Bengt
    RISE - Research Institutes of Sweden, Material och produktion, IVF.
    Piezoelectric polymeric bicomponent fibers produced by melt spinning2012Ingår i: Journal of Applied Polymer Science, ISSN 0021-8995, E-ISSN 1097-4628, Vol. 126, nr 2, s. 490-500Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Melt spinning of a novel piezoelectric bicomponent fiber, with poly(vinylidene fluoride) as the electroactive sheath component, has been demonstrated. An electrically conductive compound of carbon black (CB) and high density polyethylene was used as core material, working as an inner electrode. A force sensor consisting of a number of fibers embedded in a soft CB/polyolefin elastomer matrix was manufactured for characterization. The fibers showed a clear piezoelectric effect, with a voltage output (peak-to-peak) of up to 40 mV under lateral compression. This continuous all-polymer piezoelectric fiber introduces new possibilities toward minimal single fiber sensors as well as large area sensors produced in standard industrial weaving machines. Copyright © 2012 Wiley Periodicals, Inc.

  • 346.
    Lund, Anja
    et al.
    University of Borås, Sweden; Chalmers University of Technology, Sweden.
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    Jonasson, Christian
    Haagensen, Daniel
    Chalmers University of Technology, Sweden.
    Hagström, Bengt
    RISE - Research Institutes of Sweden, Material och produktion, IVF. Chalmers University of Technology, Sweden.
    Piezoelectric polymeric bicomponent fibers produced by melt spinning2012Ingår i: Journal of Applied Polymer Science, ISSN 0021-8995, E-ISSN 1097-4628, Vol. 126, s. 490-500Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Melt spinning of a novel piezoelectric bicomponent fiber, with poly(vinylidene fluoride) as the electroactive sheath component, has been demonstrated. An electrically conductive compound of carbon black (CB) and high density polyethylene was used as core material, working as an inner electrode. A force sensor consisting of a number of fibers embedded in a soft CB/polyolefin elastomer matrix was manufactured for characterization. The fibers showed a clear piezoelectric effect, with a voltage output (peak-to-peak) of up to 40 mV under lateral compression. This continuous all-polymer piezoelectric fiber introduces new possibilities toward minimal single fiber sensors as well as large area sensors produced in standard industrial weaving machines.

  • 347. Luthi, S R
    et al.
    Sundheimer, M L
    Margulis, W
    RISE., Swedish ICT, Acreo.
    Gomes, A S L
    800/1060 nm Dual-Wavelength Pumped TDFA Using a Single Active Pump Source2005Ingår i: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 41, nr 25, s. 1366-68Artikel i tidskrift (Refereegranskat)
  • 348. Maia, AMA
    et al.
    Karlsson, L
    Margulis, W
    RISE., Swedish ICT, Acreo.
     Gomes, ASL
    Evaluation of two imaging techniques: near-infrared transillumination dental radiographs for the detection of early approximal enamel caries2011Ingår i: Dentomaxillofacial Radiology , Vol. 40, s. 429-33Artikel i tidskrift (Refereegranskat)
  • 349. Mairov, M
    et al.
    Blums, E
    Hanson, Maj
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    High field magnetization of the colloidal Mn-Zn ferrite1999Ingår i: J. Magn. Magn. Mat, Vol. 201, s. 95-Artikel i tidskrift (Refereegranskat)
  • 350. Malhan, RK
    et al.
    Bakowski, M
    RISE., Swedish ICT, Acreo.
    Takeuchi, Y
    Sugiyama, N
    Schöner, A
    Design, process, performance of all-epitaxial normally-off SiC JFETs2009Ingår i: Phys. Status Solidi A, Vol. 206, s. 2308-28Artikel i tidskrift (Refereegranskat)
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