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  • 1.
    Berg, J
    et al.
    YKI – Ytkemiska institutet.
    Säve, G
    Håkansson, P
    Sundqvist, BUR
    Johnson, RE
    Söderström, E
    Lindquist, SE
    Crater formation in Langmuir-Blodgett films induced by electronic sputtering with fast heavy ions1987Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 51, nr 17, s. 1379-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Secondary ion formation by fast heavy ion impact (electronic sputtering) on Langmuir–Blodgett films of fatty acids has been studied. The results show unambiguously that molecular ions originate from molecules in layers other than the surface layer. Furthermore, the results indicate that craters may be formed in electronic sputtering of such films. The depth of the craters depends on the stopping power of the incident ion and lower limits of the order of 100–200 Å are obtained from the ion data.

  • 2.
    Etcheverry, Sebastian
    et al.
    RISE - Research Institutes of Sweden, ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Araujo, Leonardo F.
    PUC-RIO Pontifícia Universidade Católica do Rio de Janeiro, Brazil.
    Carvalho, Isabel C. S.
    PUC-RIO Pontifícia Universidade Católica do Rio de Janeiro, Brazil.
    Margulis, Walter
    RISE - Research Institutes of Sweden, ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Fontana, Jake
    Naval Research Laboratory, USA.
    Digital electric field induced switching of plasmonic nanorods using an electro-optic fluid fiber2017Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 111, nr 22, artikel-id 221108Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We demonstrate the digital electric field induced switching of plasmonic nanorods between "1" and "0" orthogonal aligned states using an electro-optic fluid fiber component. We show by digitally switching the nanorods that thermal rotational diffusion of the nanorods can be circumvented, demonstrating an approach to achieve submicrosecond switching times. We also show, from an initial unaligned state, that the nanorods can be aligned into the applied electric field direction in 110 ns. The high-speed digital switching of plasmonic nanorods integrated into an all-fiber optical component may provide opportunities for remote sensing and signaling applications. © 2017 Author(s).

  • 3. Fu, Y
    et al.
    Agren, H
    Höglund, L
    Andersson, J Y
    RISE., Swedish ICT, Viktoria.
    Asplund, C
    Qiu, M
    Thylen, L
    Optical reflection from excitonic quantum-dot multilayer structures2008Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, s. 183117-Artikel i tidskrift (Refereegranskat)
  • 4. Grishin, AM
    et al.
    Vanin, EV
    RISE., Swedish ICT, Acreo.
    Tarasenko, OV
    RISE., Swedish ICT, Acreo.
    Khartsev, SI
    Johansson, P
    RISE., Swedish ICT, Acreo.
    Strong broad C-broom-temperature photoluminescence in amorphous Er2O3 film2006Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, s. 21114-Artikel i tidskrift (Refereegranskat)
  • 5. Hellström, S
    et al.
    Chen, Z-H
     Fu, Y
    Qiu, M
    Soltanmoradi, R
    Wang, Q
    RISE., Swedish ICT, Acreo.
    Andersson, J Y
    RISE., Swedish ICT, Viktoria.
    Increased photocurrent in quantum dot infrared photodetector by subwavelength hole array in metal thin film2010Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, s. 231110-Artikel i tidskrift (Refereegranskat)
  • 6. Höglund, L
    et al.
    Holtz, P O
    Pettersson, H
    Asplund, C
    Wang, Q
    RISE., Swedish ICT, Acreo.
    Almqvist, S
    Malm, H
    Petrini, E
    Andersson, J Y
    RISE., Swedish ICT, Viktoria.
    Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors2008Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, s. 203512-Artikel i tidskrift (Refereegranskat)
  • 7. Höglund, L
    et al.
    Holtz, P O
    Pettersson, H
    Asplund, C
    Wang, Q
    RISE., Swedish ICT, Acreo.
    Almqvist, S
    Smuk, S
    Petrini, E
    Andersson, JY
    RISE., Swedish ICT, Viktoria.
    Bias temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors2008Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, s. 1035201-Artikel i tidskrift (Refereegranskat)
  • 8. Höglund, L
    et al.
    Holtz, P O
      Pettersson, H
    Asplund, C
    Wang, Q
    RISE., Swedish ICT, Acreo.
    Malm, H
    Almqvist, S
    Petrini, E
    Andersson, J Y
    RISE., Swedish ICT, Viktoria.
    Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors2009Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, s. 53503-Artikel i tidskrift (Refereegranskat)
  • 9.
    Jablonka, L.
    et al.
    Uppsala University, Sweden.
    Kubart, T.
    Uppsala University, Sweden.
    Gustavsson, F.
    RISE - Research Institutes of Sweden, Swerea, Swerea KIMAB AB. Uppsala University, Sweden.
    Descoins, M.
    CNRS-Université d'Aix-Marseille, France.
    Mangelinck, D.
    CNRS-Université d'Aix-Marseille, France.
    Zhang, S. -L
    Uppsala University, Sweden.
    Zhang, Z.
    Uppsala University, Sweden.
    Improving the morphological stability of nickel germanide by tantalum and tungsten additions2018Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, nr 10, artikel-id 103102Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    To enhance the morphological stability of NiGe, a material of interest as a source drain-contact in Ge-based field effect transistors, Ta or W, is added as either an interlayer or a capping layer. The efficacy of this Ta or W addition is evaluated with pure NiGe as a reference. While interlayers increase the NiGe formation temperature, capping layers do not retard the NiGe formation. Regardless of the initial position of Ta or W, the morphological stability of NiGe against agglomeration can be improved by up to 100 degrees C. The improved thermal stability can be ascribed to an inhibited surface diffusion, owing to Ta or W being located on top of NiGe after annealing, as confirmed by means of transmission electron microscopy, Rutherford backscattering spectrometry, and atom probe tomography. The latter also shows a 0.3 at. % solubility of Ta in NiGe at 450 degrees C, while no such incorporation of W is detectable. 

  • 10.
    Juuti, Paxton
    et al.
    Tampere University of Technology, Finland.
    Haapanen, Janne
    Tampere University of Technology, Finland.
    Stenroos, Christian
    Tampere University of Technology, Finland.
    Niemelä-Anttonen, Henna
    Tampere University of Technology, Finland.
    Harra, Juha
    Tampere University of Technology, Finland.
    Koivuluoto, Heli
    Tampere University of Technology, Finland.
    Teisala, Hannu
    Tampere University of Technology, Finland.
    Lahti, Johanna
    Tampere University of Technology, Finland.
    Tuominen, Mikko
    RISE - Research Institutes of Sweden, Biovetenskap och material, Kemi och material.
    Kuusipalo, Jurrka
    Tampere University of Technology, Finland.
    Vuoristo, Petri
    Tampere University of Technology, Finland.
    Mäkelä, Jyrki M.
    Tampere University of Technology, Finland.
    Achieving a slippery, liquid-infused porous surface with anti-icing properties by direct deposition of flame synthesized aerosol nanoparticles on a thermally fragile substrate2017Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 110, nr 16, artikel-id 161603Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Slippery, liquid-infused porous surfaces offer a promising route for producing omniphobic and anti-icing surfaces. Typically, these surfaces are made as a coating with expensive and time consuming assembly methods or with fluorinated films and oils. We report on a route for producing liquid-infused surfaces, which utilizes a liquid precursor fed oxygen-hydrogen flame to produce titania nanoparticles deposited directly on a low-density polyethylene film. This porous nanocoating, with thickness of several hundreds of nanometers, is then filled with silicone oil. The produced surfaces are shown to exhibit excellent anti-icing properties, with an ice adhesion strength of ∼12 kPa, which is an order of magnitude improvement when compared to the plain polyethylene film. The surface was also capable of maintaining this property even after cyclic icing testing.

  • 11.
    Lartsev, Arseniy
    et al.
    Chalmers University of Technology, Sweden.
    Yager, Tom
    Chalmers University of Technology, Sweden.
    Bergsten, Tobias
    RISE., SP – Sveriges Tekniska Forskningsinstitut, SP Mätteknik, Elektricitet.
    Tzalenchuk, Alexander
    National Physical Laboratory, UK; University of London, UK.
    Janssen, TJBM
    National Physical Laboratory, UK.
    Yakimova, Rositza
    Linköping University, Sweden.
    Lara-Avila, Samuel
    Chalmers University of Technology, Sweden.
    Kubatkin, Sergey
    Chalmers University of Technology, Sweden.
    Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge2014Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, nr 6, s. 63106-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We demonstrate reversible carrier density control across the Dirac point (Δ n∼ 1013cm-2) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

  • 12. Liu, J
    et al.
    Herlogsson, L
    Sawatdee, A
    RISE., Swedish ICT, Acreo.
    Favia, P
    Sandberg, Mats
    RISE., Swedish ICT, Acreo.
    Crispin, X
    Engquist, I
    Berggren, M
    Vertical Polyelectrolyte-Gated Organic Field-Effect Transistors2010Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, s. 103303-Artikel i tidskrift (Refereegranskat)
  • 13. Quiquempois, Y
    et al.
    Kudlinski, A
    Martinelli, G
    Margulis, W
    RISE., Swedish ICT, Acreo.
    Carvalho, I C S
    Near surface modification of the third-order nonlinear susceptibility in thermally poled silica glasses2005Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, nr 18, s. 181106-Artikel i tidskrift (Refereegranskat)
  • 14. Said, E
    et al.
    Crispin, X
    Herlogsson, L
    Elhag, S
    Robinson, N D
    Berggren, M
    RISE., Swedish ICT, Acreo.
    Polymer Field-Effect Transistor Gated Via a Poly(Styrenesulfonic Acid) Thin Film2006Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, s. 143507-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (<1€„ms) operates at low voltages (<1€„V). The results presented are relevant for low-cost printed polymer electronics._x000D_

  • 15. Soltanmoradi, R.
    et al.
    Dyakov, S. A.
    RISE., Swedish ICT, Acreo.
    Wang, Q.
    Qiu, M.
    Yan, M.
    Multi-resonator structure based on continuous silver thin films for transparent conductors2014Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, nr 6Artikel i tidskrift (Refereegranskat)
  • 16.
    Soltanmoradi, R.
    et al.
    KTH Royal Institute of Technology, Sweden.
    Dyakov, S. A.
    KTH Royal Institute of Technology, Sweden.
    Wang, Q.
    RISE., Swedish ICT, Acreo.
    Qiu, M.
    KTH Royal Institute of Technology, Sweden; Zhejiang University, China.
    Yan, M.
    KTH Royal Institute of Technology, Sweden.
    Multi-resonator structure based on continuous silver thin films for transparent conductors2014Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, nr 6, s. 61110-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A type of metal-dielectric multilayered structures is investigated theoretically and experimentally for achieving optical transparency with a high electrical conductivity. The structure in our demonstrated case comprises of two coupled metal-dielectric-metal planar optical resonators with metal-layer thicknesses near to its skin depth. Simulations show that the maximum transmittance for visible light can easily reach 90% for silver-based structures. Experimentally, the sample fabricated exhibits a transmission window with a bandwidth of 150nm and a maximum transmittance of 76% around 643nm wavelength at normal incidence. Its sheet resistance is measured to be less than 10Ω /□, much smaller than that of common indium-tin-oxide films. Transparent conductors functioning for blue light and even for the whole visible light are also shown to be theoretically possible. Owing to their simple fabrication procedure as well as design flexibility, such a layered structure can serve as a compelling alternative as transparent conductors for optoelectronic devices, especially for liquid-crystal displays and light-emitting diodes.

  • 17. Svensson, P-O
    et al.
    Nilsson, D
    Forchheimer, R
    Berggren, M
    RISE., Swedish ICT, Acreo.
    A Sensor Circuit Using Reference-Based Conductance Switching in Organic Electrochemical Transistors2008Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, s. 203301-Artikel i tidskrift (Refereegranskat)
  • 18. Triques, A L C
    et al.
    Carvalho, I C S
    Moreira, M F
    Carvalho, H R
    Fischer, R
    Lesche, B
    Margulis, W
    RISE., Swedish ICT, Acreo.
    Time evolution of depletion region in poled silica2003Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, s. 2948-Artikel i tidskrift (Refereegranskat)
  • 19. Triques, A L C
    et al.
    Cordeiro, C M B
    Balestrieri, V
    Lesche, B
    Margulis, W
    RISE., Swedish ICT, Acreo.
    Carvalho, I C S
    Depletion region in thermally poled fused silica2000Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, nr 18, s. 2496-Artikel i tidskrift (Refereegranskat)
  • 20.
    Zabel, Thomas
    et al.
    KTH Royal Institute of Technology, Sweden.
    Reuterskiöld Hedlund, Carl
    KTH Royal Institute of Technology, Sweden.
    Gustafsson, Oscar
    KTH Royal Institute of Technology, Sweden.
    Karim, Amir
    RISE., Swedish ICT, Acreo.
    Berggren, Jesper
    KTH Royal Institute of Technology, Sweden.
    Wang, Qin
    RISE., Swedish ICT, Acreo.
    Ernerheim-Jokumsen, Christopher
    KTH Royal Institute of Technology, Sweden.
    Soldemo, Markus
    KTH Royal Institute of Technology, Sweden.
    Weissenrieder, Jonas
    KTH Royal Institute of Technology, Sweden.
    Götelid, Mats
    KTH Royal Institute of Technology, Sweden.
    Hammar, Mattias
    KTH Royal Institute of Technology, Sweden.
    Auger recombination in In(Ga)Sb/InAs quantum dots2015Ingår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, nr 1, artikel-id 013103Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report on the epitaxial formation of type II In0.5Ga0.5Sb/InAs and InSb/InAs quantum dot ensembles using metal organic vapor phase epitaxy. Employing scanning tunneling spectroscopy, we determine spatial quantum dot dimensions smaller than the de Broglie wavelength of InGaSb, which strongly indicates a three dimensional hole confinement. Photoluminescence spectroscopy at low temperatures yields an enhanced radiative recombination in the mid-infrared regime at energies of 170-200 meV. This luminescence displays a strong excitation power dependence with a blueshift indicating a filling of excited quantum dot hole states. Furthermore, a rate equation model is used to extract the Auger recombination coefficient from the power dependent intensity at 77 K yielding values of 1.35 × 10-28 cm6/s for In0.5Ga0.5Sb/InAs quantum dots and 1.47 × 10-27 cm6/s for InSb/InAs quantum dots, which is about one order of magnitude lower as previously obtained values for InGaSb superlattices.

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