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  • 1.
    Hussain, Laiq
    et al.
    Halmstad University, Sweden.
    Pettersson, Håkan
    Halmstad University, Sweden.
    Wang, Qin
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Karim, Amir
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Anderson, Jan
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Jafari, Mehrdad
    Halmstad University, Sweden.
    Song, Jindong
    Korea Institute of Science and Technology, Korea.
    Choi, Won Jun
    Korea Institute of Science and Technology, Korea.
    Han, Il Ki
    Korea Institute of Science and Technology, Korea.
    Lim, Ju Young
    Korea Institute of Science and Technology, Korea.
    SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE2018In: Journal of the Korean Physical Society, ISSN 0374-4884, E-ISSN 1976-8524, Vol. 73, no 11, p. 1604-1611Article in journal (Refereed)
    Abstract [en]

    Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.

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