Change search
Refine search result
1 - 20 of 20
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Berg, J
    et al.
    YKI – Ytkemiska institutet.
    Säve, G
    Håkansson, P
    Sundqvist, BUR
    Johnson, RE
    Söderström, E
    Lindquist, SE
    Crater formation in Langmuir-Blodgett films induced by electronic sputtering with fast heavy ions1987In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 51, no 17, p. 1379-Article in journal (Refereed)
    Abstract [en]

    Secondary ion formation by fast heavy ion impact (electronic sputtering) on Langmuir–Blodgett films of fatty acids has been studied. The results show unambiguously that molecular ions originate from molecules in layers other than the surface layer. Furthermore, the results indicate that craters may be formed in electronic sputtering of such films. The depth of the craters depends on the stopping power of the incident ion and lower limits of the order of 100–200 Å are obtained from the ion data.

  • 2.
    Etcheverry, Sebastian
    et al.
    RISE - Research Institutes of Sweden, ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Araujo, Leonardo F.
    PUC-RIO Pontifícia Universidade Católica do Rio de Janeiro, Brazil.
    Carvalho, Isabel C. S.
    PUC-RIO Pontifícia Universidade Católica do Rio de Janeiro, Brazil.
    Margulis, Walter
    RISE - Research Institutes of Sweden, ICT, Acreo. KTH Royal Institute of Technology, Sweden.
    Fontana, Jake
    Naval Research Laboratory, USA.
    Digital electric field induced switching of plasmonic nanorods using an electro-optic fluid fiber2017In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 111, no 22, article id 221108Article in journal (Refereed)
    Abstract [en]

    We demonstrate the digital electric field induced switching of plasmonic nanorods between "1" and "0" orthogonal aligned states using an electro-optic fluid fiber component. We show by digitally switching the nanorods that thermal rotational diffusion of the nanorods can be circumvented, demonstrating an approach to achieve submicrosecond switching times. We also show, from an initial unaligned state, that the nanorods can be aligned into the applied electric field direction in 110 ns. The high-speed digital switching of plasmonic nanorods integrated into an all-fiber optical component may provide opportunities for remote sensing and signaling applications. © 2017 Author(s).

  • 3. Fu, Y
    et al.
    Agren, H
    Höglund, L
    Andersson, J Y
    RISE, Swedish ICT, Viktoria.
    Asplund, C
    Qiu, M
    Thylen, L
    Optical reflection from excitonic quantum-dot multilayer structures2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, p. 183117-Article in journal (Refereed)
  • 4. Grishin, AM
    et al.
    Vanin, EV
    RISE, Swedish ICT, Acreo.
    Tarasenko, OV
    RISE, Swedish ICT, Acreo.
    Khartsev, SI
    Johansson, P
    RISE, Swedish ICT, Acreo.
    Strong broad C-broom-temperature photoluminescence in amorphous Er2O3 film2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, p. 21114-Article in journal (Refereed)
  • 5. Hellström, S
    et al.
    Chen, Z-H
     Fu, Y
    Qiu, M
    Soltanmoradi, R
    Wang, Q
    RISE, Swedish ICT, Acreo.
    Andersson, J Y
    RISE, Swedish ICT, Viktoria.
    Increased photocurrent in quantum dot infrared photodetector by subwavelength hole array in metal thin film2010In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 96, p. 231110-Article in journal (Refereed)
  • 6. Höglund, L
    et al.
    Holtz, P O
    Pettersson, H
    Asplund, C
    Wang, Q
    RISE, Swedish ICT, Acreo.
    Almqvist, S
    Malm, H
    Petrini, E
    Andersson, J Y
    RISE, Swedish ICT, Viktoria.
    Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, p. 203512-Article in journal (Refereed)
  • 7. Höglund, L
    et al.
    Holtz, P O
    Pettersson, H
    Asplund, C
    Wang, Q
    RISE, Swedish ICT, Acreo.
    Almqvist, S
    Smuk, S
    Petrini, E
    Andersson, JY
    RISE, Swedish ICT, Viktoria.
    Bias temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, p. 1035201-Article in journal (Refereed)
  • 8. Höglund, L
    et al.
    Holtz, P O
      Pettersson, H
    Asplund, C
    Wang, Q
    RISE, Swedish ICT, Acreo.
    Malm, H
    Almqvist, S
    Petrini, E
    Andersson, J Y
    RISE, Swedish ICT, Viktoria.
    Optical pumping as artificial doping in quantum dots-in-a-well infrared photodetectors2009In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 94, p. 53503-Article in journal (Refereed)
  • 9.
    Jablonka, L.
    et al.
    Uppsala University, Sweden.
    Kubart, T.
    Uppsala University, Sweden.
    Gustavsson, F.
    RISE - Research Institutes of Sweden, Swerea, Swerea KIMAB. Uppsala University, Sweden.
    Descoins, M.
    CNRS-Université d'Aix-Marseille, France.
    Mangelinck, D.
    CNRS-Université d'Aix-Marseille, France.
    Zhang, S. -L
    Uppsala University, Sweden.
    Zhang, Z.
    Uppsala University, Sweden.
    Improving the morphological stability of nickel germanide by tantalum and tungsten additions2018In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 10, article id 103102Article in journal (Refereed)
    Abstract [en]

    To enhance the morphological stability of NiGe, a material of interest as a source drain-contact in Ge-based field effect transistors, Ta or W, is added as either an interlayer or a capping layer. The efficacy of this Ta or W addition is evaluated with pure NiGe as a reference. While interlayers increase the NiGe formation temperature, capping layers do not retard the NiGe formation. Regardless of the initial position of Ta or W, the morphological stability of NiGe against agglomeration can be improved by up to 100 degrees C. The improved thermal stability can be ascribed to an inhibited surface diffusion, owing to Ta or W being located on top of NiGe after annealing, as confirmed by means of transmission electron microscopy, Rutherford backscattering spectrometry, and atom probe tomography. The latter also shows a 0.3 at. % solubility of Ta in NiGe at 450 degrees C, while no such incorporation of W is detectable. 

  • 10.
    Juuti, Paxton
    et al.
    Tampere University of Technology, Finland.
    Haapanen, Janne
    Tampere University of Technology, Finland.
    Stenroos, Christian
    Tampere University of Technology, Finland.
    Niemelä-Anttonen, Henna
    Tampere University of Technology, Finland.
    Harra, Juha
    Tampere University of Technology, Finland.
    Koivuluoto, Heli
    Tampere University of Technology, Finland.
    Teisala, Hannu
    Tampere University of Technology, Finland.
    Lahti, Johanna
    Tampere University of Technology, Finland.
    Tuominen, Mikko
    RISE - Research Institutes of Sweden, Bioscience and Materials, Chemistry and Materials.
    Kuusipalo, Jurrka
    Tampere University of Technology, Finland.
    Vuoristo, Petri
    Tampere University of Technology, Finland.
    Mäkelä, Jyrki M.
    Tampere University of Technology, Finland.
    Achieving a slippery, liquid-infused porous surface with anti-icing properties by direct deposition of flame synthesized aerosol nanoparticles on a thermally fragile substrate2017In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 110, no 16, article id 161603Article in journal (Refereed)
    Abstract [en]

    Slippery, liquid-infused porous surfaces offer a promising route for producing omniphobic and anti-icing surfaces. Typically, these surfaces are made as a coating with expensive and time consuming assembly methods or with fluorinated films and oils. We report on a route for producing liquid-infused surfaces, which utilizes a liquid precursor fed oxygen-hydrogen flame to produce titania nanoparticles deposited directly on a low-density polyethylene film. This porous nanocoating, with thickness of several hundreds of nanometers, is then filled with silicone oil. The produced surfaces are shown to exhibit excellent anti-icing properties, with an ice adhesion strength of ∼12 kPa, which is an order of magnitude improvement when compared to the plain polyethylene film. The surface was also capable of maintaining this property even after cyclic icing testing.

  • 11. Lartsev, Arseniy
    et al.
    Yager, Tom
    Bergsten, Tobias
    RISE, SP – Sveriges Tekniska Forskningsinstitut, SP Mätteknik, Elektricitet.
    Tzalenchuk, Alexander
    Janssen, TJBM
    Yakimova, Rositza
    Lara-Avila, Samuel
    Kubatkin, Sergey
    Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge”2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 6, p. 63106-Article in journal (Refereed)
  • 12. Liu, J
    et al.
    Herlogsson, L
    Sawatdee, A
    RISE, Swedish ICT, Acreo.
    Favia, P
    Sandberg, M
    RISE, Swedish ICT, Acreo.
    Crispin, X
    Engquist, I
    Berggren, M
    Vertical Polyelectrolyte-Gated Organic Field-Effect Transistors2010In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, p. 103303-Article in journal (Refereed)
  • 13. Quiquempois, Y
    et al.
    Kudlinski, A
    Martinelli, G
    Margulis, W
    RISE, Swedish ICT, Acreo.
    Carvalho, I C S
    Near surface modification of the third-order nonlinear susceptibility in thermally poled silica glasses2005In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 86, no 18, p. 181106-Article in journal (Refereed)
  • 14. Said, E
    et al.
    Crispin, X
    Herlogsson, L
    Elhag, S
    Robinson, N D
    Berggren, M
    RISE, Swedish ICT, Acreo.
    Polymer Field-Effect Transistor Gated Via a Poly(Styrenesulfonic Acid) Thin Film2006In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, p. 143507-Article in journal (Refereed)
    Abstract [en]

    A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (<1€„ms) operates at low voltages (<1€„V). The results presented are relevant for low-cost printed polymer electronics._x000D_

  • 15. Soltanmoradi, R.
    et al.
    Dyakov, S. A.
    RISE, Swedish ICT, Acreo.
    Wang, Q.
    Qiu, M.
    Yan, M.
    Multi-resonator structure based on continuous silver thin films for transparent conductors2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 6Article in journal (Refereed)
  • 16. Soltanmoradi, R
    et al.
    Dyakov, SA
    Wang, Q
    RISE, Swedish ICT, Acreo.
    Qiu, M
    Yan, M
    Multi-resonator structure based on continuous silver thin films for transparent conductors2014In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 105, no 6, p. 61110-Article in journal (Refereed)
  • 17. Svensson, P-O
    et al.
    Nilsson, D
    Forchheimer, R
    Berggren, M
    RISE, Swedish ICT, Acreo.
    A Sensor Circuit Using Reference-Based Conductance Switching in Organic Electrochemical Transistors2008In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, p. 203301-Article in journal (Refereed)
  • 18. Triques, A L C
    et al.
    Carvalho, I C S
    Moreira, M F
    Carvalho, H R
    Fischer, R
    Lesche, B
    Margulis, W
    RISE, Swedish ICT, Acreo.
    Time evolution of depletion region in poled silica2003In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, p. 2948-Article in journal (Refereed)
  • 19. Triques, A L C
    et al.
    Cordeiro, C M B
    Balestrieri, V
    Lesche, B
    Margulis, W
    RISE, Swedish ICT, Acreo.
    Carvalho, I C S
    Depletion region in thermally poled fused silica2000In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 18, p. 2496-Article in journal (Refereed)
  • 20. Zabel, T
    et al.
    Reuterskiöld Hedlund, C
    Gustafsson, O
    Karim, A
    Berggren, J
    Wang, Q
    RISE, Swedish ICT, Acreo.
    Ernerheim-Jokumsen, C
    Soldemo, M
    Weissenrieder, J
    Götelid, M
    Hammar, M
    Auger recombination in In(Ga)Sb/InAs quantum dots2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, p. 13103-Article in journal (Refereed)
1 - 20 of 20
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.35.5