Here, we resolve the nature of the moment coupling between 10-nm dimercaptosuccinic acid-coated magnetic nanoparticles. The individual iron oxide cores were composed of >95% maghemite and agglomerated to clusters. At room temperature the ensemble behaved as a superparamagnet according to Mössbauer and magnetization measurements, however, with clear signs of dipolar interactions. Analysis of temperature-dependent ac susceptibility data in the superparamagnetic regime indicates a tendency for dipolar-coupled anticorrelations of the core moments within the clusters. To resolve the directional correlations between the particle moments we performed polarized small-angle neutron scattering and determined the magnetic spin-flip cross section of the powder in low magnetic field at 300 K. We extract the underlying magnetic correlation function of the magnetization vector field by an indirect Fourier transform of the cross section. The correlation function suggests nonstochastic preferential alignment between neighboring moments despite thermal fluctuations, with anticorrelations clearly dominating for next-nearest moments. These tendencies are confirmed by Monte Carlo simulations of such core clusters.

Fluorescence blinking of single colloidal semiconductor quantum dots (QDs) has been extensively studied, and several sophisticated models have been proposed. In this work, we derive Heisenberg equations of motion to carefully study principal transition processes, i.e., photoexcitation, energy relaxation, impact ionization and Auger recombination, radiative and nonradiative recombinations, and tunneling between core states and surface states, of the electron-hole pair in single CdSe-CdS/ZnS core-multishell QDs and show that the on-state probability density distribution of the QD fluorescence obeys the random telegraph signal theory because of the random radiative recombination of the photoexcited electron-hole pair in the QD core, while the off-state probability density distribution obeys the inverse power law distribution due to the series of random walks of the photoexcited electron in the two-dimensional surface-state network after the electron tunnels from the QD core to the QD surface. These two different blinking characteristics of the single QD are resolved experimentally by properly adjusting the optical excitation power and the bin time.

We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of an atomically thin Au layer on the Bu-L followed by annealing at 850 °C in an argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterization and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate-tunable ambipolar transport across the Dirac point, but we find no observable enhancement of spin-orbit effects in the graphene layer, despite its proximity to the intercalated Au layer. 

We investigate the properties of the magnetocapacitance and dissipation factor of epitaxial graphene Hall bars with different electrode configurations to gain insight into the underlying physical mechanisms. The dependence of magnetocapacitance and dissipation factor on the magnetic field shows how the screening ability of the two-dimensional electron gas (2DEG) changes at the transition from the nonquantized to the quantized state. Both magnetocapacitance and dissipation factor exhibit a characteristic and correlated voltage dependence, which is attributed to the alternating contraction and expansion of the nonscreening 2DEG regions due to the alternating local electric field. Two regimes with seemingly different voltage dependencies are explained as the limiting cases of weak and strong electric fields of the same general voltage dependence. Electric fields in the plane of the 2DEG are found to cause about three orders of magnitude more ac dissipation than perpendicular electric fields. This strong directionality is attributed to the fact that the electrons are mobile in the plane of the 2DEG but are confined in the third dimension. In the quantized state, not only the screening edge of the 2DEG but also compressible puddles embedded in the bulk cause ac dissipation, as follows from the measured frequency dependence. Finally, characteristic parameters like the width of the screening edge, the threshold voltage, and the charging time of the compressible puddles are determined. .

In this work we present friction-force microscopy (FFM) lattice-resolved images acquired on the (100) facet of the semiconductor organic oligomer (2Z,2′Z)-3,3′-(1,4-phenylene)bis(2-(4-butoxyphenyl)acrylonitrile) (β-DBDCS) crystal in water at room temperature. Stick-slip contrast, lateral contact stiffness, and friction forces are found to depend strongly on the sliding direction due to the anisotropic packing of the molecular chains forming the crystal surface along the [010] and [001] directions. The anisotropy also causes the maximum value of the normal force applicable before wearing to increase by a factor of 3 when the scan is performed along the [001] direction on the (100) face. Altogether, our results contribute to achieving a better understanding of the molecular origin of friction anisotropy on soft crystalline surfaces, which has been often hypothesized but rarely investigated in the literature.