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  • 1.
    Bakowski, M
    et al.
    RISE, Swedish ICT, Acreo.
    Schöner, A
    Petermann, I
    RISE, Swedish ICT, Acreo.
    Savage, S
    Silicon carbide APD with improved detection sensitivity stability2010In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 1089-Article in journal (Refereed)
  • 2. Esteve, R
    et al.
    Schöner, A
    RISE, Swedish ICT, Acreo.
      Reshanov, S A
     Zetterling, C-M  
    Comparative study of thermal oxides post-oxidized deposited oxides on n-type free standing 3C-SiC2010In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 829-32Article in journal (Refereed)
  • 3. Gutt, T
    et al.
    Przewlocki, HM
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    A C-V method of slow-switching interface traps identification in silicon carbide MOS structures2010In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 523-Article in journal (Refereed)
  • 4.
    Lim, Jang-Kwon
    et al.
    RISE, Swedish ICT, Acreo.
    Åstlund, Ludwig
    Wang, Qin
    RISE, Swedish ICT, Acreo.
    Kaplan, Wlodek
    Reshanov, SA
    Schöner, Adolf
    Bakwoski, Mietek
    Nee, H-P
    A theoretical experimental comparison of 4H- 6H-SiC MSM UV photodetectors2012In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 717-720, p. 1207-10Article in journal (Refereed)
  • 5.
    Lim, J-K
    et al.
    RISE, Swedish ICT, Acreo.
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    Nee, H-P
    Design gate drive considerations for epitaxial 1.2kV buried grid N-on N-off JFETs for operation at 250C2010In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 961-Article in journal (Refereed)
  • 6.
    Lim, J-K
    et al.
    RISE, Swedish ICT, Acreo.
    Peftitsis, D.
    KTH Royal Institute of Technology, Sweden.
    Peftitsis Sadik, D-P
    KTH Royal Institute of Technology, Sweden.
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    Nee, H-P
    KTH Royal Institute of Technology, Sweden.
    Evaluation of buried grid JBS diode2014In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, p. 804-807Article in journal (Refereed)
    Abstract [en]

    The 4H-SiC Schottky barrier diodes for high temperature operation over 200 °C have been developed using buried grids formed by implantation. Compared to a conventional JBS-type SBD with surface grid (SG), JBS-type SBD with buried grid (BG) has significantly reduced leakage current at reverse bias due to a better field shielding of the Schottky contact. By introducing the BG technology, the 1.7 kV diodes with an anode area 0.0024 cm2 (1 A) and 0.024 cm2 (10 A) were successfully fabricated, encapsulated in TO220 packages, and electrically evaluated. Two types of buried grid arrangement with different grid spacing dimensions were investigated. The measured IV characteristics were compared with simulation. The best fit was obtained with an active area of approximately 60% and 70% of the anode area in large and small devices, respectively. The measured values of the device capacitances were 1000 pF in large devices and 100 pF in small devices at zero bias. The capacitance values are proportional to the device area. The recovery behavior of big devices was measured in a double pulse tester and simulated. The recovery charge, Qc, was 18 nC and 24 nC in simulation and measurement, respectively. The fabricated BG JBS-type SBDs have a smaller maximum reverse recovery current compared to the commercial devices. No influence of the different grid spacing on the recovery charge was observed.

  • 7.
    Lim, J-K
    et al.
    RISE, Swedish ICT, Acreo.
    Peftitsis, D
    Rabkowski, J
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    Nee, H-P
    Modeling of the impact of parameter spread on the switching performance of parallel-connected SiC VJFETs2013In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, p. 1098-102Article in journal (Refereed)
  • 8. Lim, J-K
    et al.
    Tolstoy, G
      Peftitsis, D
    Rabkowski, J
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    Nee, H-P
    Comparison of total losses of 1.2kV SiC JFET BJT in DC-DC converter including gate driver2011In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 679-80, p. 649-52Article in journal (Refereed)
  • 9. Nee, H-P
    et al.
    Rabkowski, J
    Peftitsis, D
    Tolstoy, G
    Colmenares, J
    Sadik, D-P
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    Lim, J-K
    RISE, Swedish ICT, Acreo.
    Antonopoulos, A
    Ängquist, L
    Zdanowski, M
    High-Efficiency Power Conversion Using Silicon Carbide Power Electronics2014In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780Article in journal (Refereed)
  • 10. Tolstoy, G
    et al.
    Peftitsis, D
    Lim, J-K
    RISE, Swedish ICT, Acreo.
    Bakowski, M
    RISE, Swedish ICT, Acreo.
    Nee, H-P  
    Circuit modelling of vertical buried-grid SiC JFETs2010In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 965-Article in journal (Refereed)
  • 11. Weidner, M
    et al.
    Trapaidze, L
      Pensl, G
    Reshanov,  SA
      Schöner, A
    RISE, Swedish ICT, Acreo.
    Itoh,  H
    Ohshima, T
     Kimoto, T
    Deep defects in 3C-SiC generated by H+- He+-implantation or by irradiation with high-energy electrons2010In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 645-648, p. 439-442Article in journal (Refereed)
  • 12.
    Zhang, Andy Zhenzhong
    et al.
    RISE, Swedish ICT, Acreo. Ascatron AB, Sweden.
    Reshanov, Sergey A.
    Ascatron AB, Sweden.
    Schöner, Adolf
    Ascatron AB, Sweden.
    Kaplan, Wlodek
    Ascatron AB, Sweden.
    Kwietniewski, Norbert
    Warsaw University of Technology, Poland.
    Lim, Jangkwon
    RISE, Swedish ICT, Acreo.
    Bakowski, Mietek
    RISE, Swedish ICT, Acreo.
    Planarization of epitaxial SiC trench structures by plasma ion etching2015In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, p. 549-552Article in journal (Refereed)
    Abstract [en]

    In this work, we present a planarization concept for epitaxial SiC trench structures involving reactive ion etching (RIE) and inductive coupled plasma (ICP) dry etching. The general idea is to transfer the flat surface from spun-on BCB/photo-resist layers to deposited silicon dioxide and finally to bulk SiC by applying process conditions with the same etch rate for the different materials. In this way several microns of unwanted material can be removed and planar SiC surfaces are obtained. With this method trench structures filled by epitaxial re-growth can be planarized with smooth surfaces and good homogeneity over the wafer. Cost-efficient device manufacturing can be achieved by using standard semiconductor process equipment. This technology makes it possible to manufacture advanced epitaxial SiC material structures for devices such as trench JBS diodes and double-gate trench JFETs.

1 - 12 of 12
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