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  • 1. Bjurshagen, S
    et al.
    Evekull, D
    Koch, R
    RISE, Swedish ICT, Acreo.
    Generation of blue light at 469 nm by efficient frequency doubling of a diode-pumped Nd:YAG laser2002In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 38, p. 324-25Article in journal (Refereed)
  • 2. Drozin, L
    et al.
    Fonjallaz, P-Y
    RISE, Swedish ICT, Acreo.
    Stensland, L
    Long-period fibre gratings written by CO2 exposure of H2-loaded, standard fibres2000In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 36, no 8, p. 742-Article in journal (Refereed)
  • 3. Evekull, D
    et al.
    Johansson, S
    Olson, M
    Koch, R
    RISE, Swedish ICT, Acreo.
    Laurell, F
    Polymer encapsulated miniature Nd:YAG lasers2003In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, p. 1446-48Article in journal (Refereed)
  • 4.
    Forzati, M
    et al.
    RISE, Swedish ICT, Acreo.
    Berntson, A
    RISE, Swedish ICT, Acreo.
    Mårtensson, J
    RISE, Swedish ICT, Acreo.
    Djupsjöbacka, A
    RISE, Swedish ICT, Acreo.
    Li, J
    RISE, Swedish ICT, Acreo.
    Melin, S
    40 Gbit/s field experiment over 820 km transmission link designed for 10 Gbit/s using APRZ modulation format2006In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 42, p. 991-92Article in journal (Refereed)
  • 5.
    Forzati, M
    et al.
    RISE, Swedish ICT, Acreo.
    Iyer, S
    Berntson, A
    RISE, Swedish ICT, Acreo.
    Mårtensson, J
    RISE, Swedish ICT, Acreo.
    Experimental study of single-MZM APRZ transmitters for fibre-optic communications2008In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 44, p. 148-49Article in journal (Refereed)
  • 6.
    Jacobsen, G
    RISE, Swedish ICT, Acreo.
    Laser phase noise induced error-rate floors in differential n-level phase-shift-keying coherent receivers2010In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 46, no 10, p. 698-700Article in journal (Refereed)
  • 7. Luthi, S R
    et al.
    Sundheimer, M L
    Margulis, W
    RISE, Swedish ICT, Acreo.
    Gomes, A S L
    800/1060 nm Dual-Wavelength Pumped TDFA Using a Single Active Pump Source2005In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 41, no 25, p. 1366-68Article in journal (Refereed)
  • 8.
    Mårtensson, J
    et al.
    RISE, Swedish ICT, Acreo.
    Westlund, M
    Berntson, A
    RISE, Swedish ICT, Acreo.
    Intra-channel pulse interactions in 40 Gbit/s dispersion-managed RZ transmission systems2000In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 36, p. 244-Article in journal (Refereed)
  • 9.
    Park, M. S.
    et al.
    Korea Institute of Science and Technology, South Korea.
    Jain, V.
    Halmstad University, Sweden; Lund University, Sweden.
    Lee, E. H.
    Korea Institute of Science and Technology, South Korea.
    Kim, S. H.
    Korea Institute of Science and Technology, South Korea.
    Pettersson, H.
    Halmstad University, Sweden; Lund University, Sweden.
    Wang, Q.
    RISE, Swedish ICT, Acreo.
    Song, J. D.
    Korea Institute of Science and Technology, South Korea.
    Choi, W. J.
    Korea Institute of Science and Technology, South Korea.
    InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K2014In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 50, no 23, p. 1731-3Article in journal (Refereed)
    Abstract [en]

    High-temperature operating performance of p-i-p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In 0.15 Ga 0.85 As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

  • 10. Park, M.S.
    et al.
    Jain, V.
    Lee, E.H.
    Kim, S.H.
    Pettersson, H.
    Wang, Q.
    RISE, Swedish ICT, Acreo.
    Song, J.D.
    Choi, W.J.
    InAs/GaAs p–i–p quantum dots-in-a-well infrared photodetectors operating beyond 200 K2014In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 0, no 23, p. 1731-1733Article in journal (Refereed)
    Abstract [en]

    High-temperature operating performance of p-i-p quantum dots-in-a-well infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped self-assembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.

  • 11. Pastor, D
    et al.
    Ortega, B
    Capmany, J
    Fonjallaz, P-Y
    Popov, M
    RISE, Swedish ICT, Acreo.
    Tunable microwave photonic filter for noise interference suppression in UMTS base stations2004In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 40, no 16, p. 997-98Article in journal (Refereed)
  • 12.
    Sergeyev, S
    RISE, Swedish ICT, Acreo.
    Model of high-concentration erbium-doped fibre amplifier: effects of migration upconversion processes2003In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 39, no 6, p. 511-12Article in journal (Refereed)
  • 13. Taccheo, S
    et al.
    Sorbello, G
    DellaValle, G
    Laporta, P
    Karlsson, G
    Laurell, F
    Margulis, W
    RISE, Swedish ICT, Acreo.
    Cattaneo, S
    Generation of micro- THz-waves at 1.5 mu m by dual-frequency Er:Yb laser2001In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 37, no 25, p. 1463-Article in journal (Refereed)
1 - 13 of 13
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