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  • 1.
    Akbari, Saeed
    et al.
    RISE - Research Institutes of Sweden, Material och produktion, IVF.
    Sakhaei, A. H.
    Singapore University of Technology and Design, Singapore; University of Exeter, UK.
    Panjwani, S.
    Singapore University of Technology and Design, Singapore.
    Kowsari, K.
    Singapore University of Technology and Design, Singapore.
    Serjourei, A.
    Singapore University of Technology and Design, Singapore.
    Ge, Q.
    Singapore University of Technology and Design, Singapore.
    Multimaterial 3D Printed Soft Actuators Powered by Shape Memory Alloy Wires2019Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 290, s. 177-189Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    Shape memory alloys (SMAs) have been widely used to fabricate soft actuators by embedding SMA wires into various soft matrices manufactured by conventional moulding methods or novel three-dimensional (3D) printing techniques. However, soft matrices of SMA based actuators are typically fabricated from only one or two different materials. Here, we exploit the great manufacturing flexibility of multimaterial 3D printing to fabricate various bending, twisting and extensional actuators by precisely controlling the spatial arrangements of different printing materials with different stiffnesses. In order to achieve a broad range of deformations, ten different printing materials were characterized and used in the actuators design. In addition, we developed a finite element model to simulate complex deformations of the printed actuators and facilitate the design process. The model incorporates a user defined material subroutine that describes the nonlinear temperature dependant behavior of SMAs. The results show the efficiency and flexibility of multimaterial 3D printing in tailoring the deformed shape of the SMA based soft actuators, which cannot be accomplished using conventional manufacturing methods such as moulding.

  • 2. Holm, J
    et al.
    Ahlfeldt, H
    Svensson, M
    RISE., Swedish ICT, Acreo.
    Vieider, C
    Through-etched Silicon Carriers for Passive Alignment of Optical Fibers to Surface-Active Optoelectronic Components2000Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 82, nr 1, s. 245-Artikkel i tidsskrift (Fagfellevurdert)
  • 3. Höchst, A
    et al.
    Scheuerer, R
    Stahl, H
    Fischer, F
    Metzger, L
    Reichenbach, R
    Lrmer, F
    Kronmuller, S
    Watcham, S
    Rusu, C
    RISE., Swedish ICT, Acreo.
    Stable thin film encapsulation of acceleration sensors using polycrystalline silicon as sacrificial encapsulation layer2004Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 114, s. 355-361Artikkel i tidsskrift (Fagfellevurdert)
  • 4.
    Le Boulbar, E.D.
    et al.
    University of Bath.
    Edwards, M.J.
    University of Bath.
    Vittoz, S.
    TIMA Laboratory (UJF CNRS G-INP).
    Vanko, G.
    Slovak Academy of Sciences.
    Brinkfeldt, Klas
    RISE, Swerea, Swerea IVF AB.
    Rufer, L.
    TIMA Laboratory (UJF CNRS G-INP).
    Johander, Per
    RISE, Swerea, Swerea IVF AB.
    Lalinský, T.
    Slovak Academy of Sciences.
    Bowen, C.R.
    University of Bath.
    Allsopp, D.W.E.
    University of Bath.
    Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor2013Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 194, s. 247-251Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    This work reports the bias and pressure sensitivity of AlGaN/GaN High Electron Mobility Transistors (HEMTs) sensing elements strategically placed on a pressure sensitive diaphragm clamped at its edges. The sensitivity was over 150 times greater in the weak inversion regime than in the strong inversion regime of the HEMT, leading to a drain current change of >38% when a pressure of 50 bar was applied. The sensitivity of the HEMT to pressure followed an exponential dependence from atmospheric pressure up to 80 bar, behaviour explained by the response of the density of a two-dimensional electron gas to pressure induced changes in the HEMT threshold voltage in the weak inversion regime. Finally, it was found that the sensitivity of the HEMT was maximum when it was situated in the middle of the diaphragm, whereas a device mounted over the clamping point showed less than 0.02% change in drain current when pressure change of 50 bar was applied. © 2013 Elsevier B.V.

  • 5.
    Nilsson, Erik
    et al.
    RISE - Research Institutes of Sweden, Material och produktion, IVF.
    Lund, Anja
    Chalmers University of Technology, Sweden.
    Jonasson, Christian
    RISE., Swedish ICT, Acreo.
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    Hagström, Bengt
    RISE - Research Institutes of Sweden, Material och produktion, IVF.
    Poling and characterization of piezoelectric polymer fibers for use in textile sensors2013Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 201, s. 477-486Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    This study reports on the poling and characteristics of a melt-spun piezoelectric bicomponent fiber with poly(vinylidene fluoride) (PVDF) as its sheath component and a conductive composite with carbon black (CB) and high density polyethylene (HDPE) as its core component. The influence of poling conditions on the piezoelectric properties of the fibers has been investigated. The poling parameters temperature, time and poling voltage have been varied and the piezoelectric effect of both contact- and corona-poled yarns have been evaluated. The results show that a high piezoelectric effect is achieved when the poling voltage is high as possible and the poling temperature is between 60° C and 120 °C. It was also shown that permanent polarization is achieved in a time as short as 2 s in corona-poled fibers. A yarn exposed to a sinusoidal axial tension of 0.07% strain (the corresponding force amplitude was 0.05 N) shows an intrinsic voltage output of 4 V. The mean power from a 25 mm length of yarn is estimated to be 15 nW. To demonstrate the fibers sensor properties, they are woven into a textile fabric from which a force sensor is manufactured and used to detect the heartbeat of a human.

  • 6. Nilsson, Erik
    et al.
    Lund, Anja
    Jonasson, Christian
    Johansson, Christer
    RISE., Swedish ICT, Acreo.
    Hagström, Bengt
    Poling characterization of piezoelectric polymer fibers for use in textile sensors2013Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 201, s. 477-486Artikkel i tidsskrift (Fagfellevurdert)
  • 7.
    Norlin, P.
    et al.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Åberg, O.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Junique, S.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Kaplan, W.
    RISE - Research Institutes of Sweden, ICT, Acreo.
    Andersson, J. Y.
    RISE., Swedish ICT, Viktoria.
    Nilsson, G.
    ScandiDos AB, Sweden.
    A cubic isotropic X-ray dose detector diode fabricated by DRIE of SOI substrates2014Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 213, s. 116-21Artikkel i tidsskrift (Fagfellevurdert)
    Abstract [en]

    A novel X-ray detector diode, optimized for angular independent (isotropic) dose response, is presented. The diode is designed as a silicon cube with p-n junctions on all six sides, which creates a device that is close to being symmetrical in 3D. The cube edge is 300 μm or 410 μm. Its manufacturing process is based on micromachining, featuring deep reactive ion etching (DRIE) of silicon-on-insulator (SOI) substrates, doping of vertical walls from gas phase dopants and re-fill of etched trenches with polysilicon. The variation in detector response to 6 MV X-rays, in a ±30° beam angle range, was at best ±0.5% for a cubic diode compared to ±3.3% for conventional diodes, which indicates improvement by a factor 7.

  • 8.
    Olsson, A
    et al.
    RISE., Swedish ICT, Acreo.
    Stemme, G
    Stemme, E
    Numerical experimental studies of flat-walled diffuser elements for valve-less micropumps2000Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 84, nr 1, s. 165-Artikkel i tidsskrift (Fagfellevurdert)
  • 9. Rödjegård, H
    et al.
    Andersson, GI
    RISE., Swedish ICT, Acreo.
    A robust semi-digital readout method for crosstalk elimination in resonant sensors2005Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 121, nr 1, s. 72-77Artikkel i tidsskrift (Fagfellevurdert)
  • 10. Weinert, A
    et al.
    Andersson, GI
    RISE., Swedish ICT, Acreo.
    High resolution resonant double gate transistor for oscillating structures2001Inngår i: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 90, nr 1, s. 20-30Artikkel i tidsskrift (Fagfellevurdert)
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v. 2.35.7