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  • 1.
    Ricci, Stefano
    et al.
    University of Florence, Italy.
    Meacci, Valentino
    University of Florence, Italy.
    Birkhofer, Beat
    Sika Services AG, Switzerland.
    Wiklund, Johan
    RISE - Research Institutes of Sweden, Bioscience and Materials, Agrifood and Bioscience.
    FPGA-based system for in-line measurement of velocity profiles of fluids in industrial pipe flow2017In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, Vol. 64, no 5, p. 3997-4005Article in journal (Refereed)
    Abstract [en]

    The rheology of a fluid flowing in an industrial process pipe can be calculated by combining the pressure drop and the velocity profile that the fluid develops across the tube diameter. The profile is obtained noninvasively through an ultrasound Doppler investigation. Unfortunately, at present, no system capable of real-time velocity profile assessment is available for in-line industrial rheological measurements, and tests are operated by manually moving fluid specimens to specialized laboratories. In this work, we present an embedded system capable of in-line and real-time measurement of velocity profile and pressure drop, which enables the automatic rheological characterization of non-Newtonian fluids in process pipes. The system includes all the electronics for the ultrasound front-end, as well as the digital devices for the real-time calculation of the velocity profile. The proposed system is highly programmable, low-noise, and specifically targeted for industrial use. It is shown capable of producing, for example, 512-point velocity profiles at 45 Hz rate. An application is presented where a sludge fluid, flowing at 600 L/min in a 48 mm diameter high-grade stainless steel pipe, is characterized in real-time with a ±5% accuracy.

  • 2.
    Sadik, Diane-Perle
    et al.
    KTH Royal Institute of Technology, Sweden.
    Colmenares, Juan
    KTH Royal Institute of Technology, Sweden.
    Tolstoy, Georg
    KTH Royal Institute of Technology, Sweden.
    Peftitsis, Dimosthenis
    ETH Zurich, Switzerland.
    Bakowski, Mietek
    RISE, Swedish ICT, Acreo.
    Rabkowski, Jacek
    Warsaw University of Technology, Poland.
    Nee, Hans-Peter
    KTH Royal Institute of Technology, Sweden.
    Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors2016In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, Vol. 63, no 4, p. 1995-2004, article id 7349199Article in journal (Refereed)
    Abstract [en]

    An experimental analysis of the behavior under short-circuit conditions of three different silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a short-circuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 s were achieved.

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