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  • 1.
    Bakowski, Mietek
    et al.
    RISE, Swedish ICT, Acreo.
    Ranstad, P.
    Alstom Power Sweden AB, Sweden.
    Lim, Jang-Kwon
    RISE, Swedish ICT, Acreo.
    Kaplan, Wlodek
    RISE, Swedish ICT, Acreo. Ascatron AB, Sweden.
    Reshanov, Sergey
    RISE, Swedish ICT, Acreo. Ascatron AB, Sweden.
    Schoner, Adolf
    RISE, Swedish ICT, Acreo. Ascatron AB, Sweden.
    Giezendanner, F.
    Alstom Power Sweden AB, Sweden.
    Ranstad, A.
    Alstom Power Sweden AB, Sweden.
    Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply2015In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, no 2, p. 366-373Article in journal (Refereed)
    Abstract [en]

    10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter

  • 2.
    Kawahara, Jun
    et al.
    RISE, Swedish ICT, Acreo.
    Andersson Ersman, Peter
    RISE, Swedish ICT, Acreo.
    Katoh, Kazuya
    Lintec Corporation, Japan.
    Berggren, Magnus
    Linköping University, Sweden.
    Fast-Switching Printed Organic Electrochemical Transistors Including Electronic Vias Through Plastic Paper Substrates2013In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 60, no 6, p. 2052-2056, article id 6515640Article in journal (Refereed)
    Abstract [en]

    A novel vertical architecture for all-printed organic electrochemical transistors, based on poly(3, 4-ethylenedioxythiophene):poly(styrene sulfonate), realized on flexible substrates, is reported. The transistors are manufactured along both faces of plastic or paper substrates via connections are realized using laser ablation or simple punch through using a pin. Successful modulation of the electric current that flows between the two sides of the substrate is achieved using electrolyte-gating electrochemical modulation of the electronic charge transport of the bulk of the transistor channel. In addition to this, the transistors are exhibiting fast switching high ON/OFF current ratios.

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