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Modelling and optimisation of a sapphire/GaN-based diaphragm structure for pressure sensing in harsh environments
University of Bath.
CNRS.
RISE, Swerea, Swerea IVF.
CNRS.
Show others and affiliations
2010 (English)In: Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, p. 127-130Conference paper, Published paper (Refereed)
Abstract [en]

GaN is a potential sensor material for harsh environments due to its piezoelectric and mechanical properties. In this paper an 8mm diameter sensor structure is proposed based on a GaN / AlGaN / sapphire HEMT wafer. The discs will be glass-bonded to an alumina package, creating a 'drumskin' type sensor that is sensitive to pressure changes. The electromechanical behaviour of the sensor is studied in an attempt to optimise the design of a pressure sensor (HEMT position and sapphire thickness) for operation in the range of 10 - 50 bar (5 MPa) and above 300°C. ©2010 IEEE.

Place, publisher, year, edition, pages
2010. p. 127-130
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13432DOI: 10.1109/ASDAM.2010.5666320Scopus ID: 2-s2.0-78651448429ISBN: 9781424485758 (print)OAI: oai:DiVA.org:ri-13432DiVA, id: diva2:973639
Conference
18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Available from: 2016-09-22 Created: 2016-09-22Bibliographically approved

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