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High temperature packaging for SiC power transistors
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
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2012 (English)In: Proceedings - 2012 45th International Symposium on Microelectronics, IMAPS 2012, 2012, 1124-1130 p.Conference paper, Published paper (Refereed)
Abstract [en]

Power transistors based on silicon carbide (SiC) are now commercially available. They have a higher efficiency and higher voltage blocking capabilities than conventional silicon devices. The wide-band gap and chemical inertness of SiC makes it suitable to high temperature operation. However, there is a need for new packaging for power transistors that can operate in higher temperatures. We have developed a package based on ceramics and silver for high temperature operation of SiC power transistors. Three types of SiC devices from different manufacturers are packaged and tested in room temperature. Though the devices were still functional after the packaging process, their performance seem to have degraded. This could be a result of the high temperature packaging process and the measurement setup. FEM simulations are also performed to investigate the thermo-mechanical behavior of the package. The target operating temperature of the package is 400°C. Modeling show stress concentrations at the corners of the device chip and suggests that this stress is decreased if the substrate metallization is changed from copper to silver.

Place, publisher, year, edition, pages
2012. 1124-1130 p.
Keyword [en]
BJT, High temperature, MOSFET, Packaging, SiC
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13418Scopus ID: 2-s2.0-84876923977OAI: oai:DiVA.org:ri-13418DiVA: diva2:973625
Conference
45th Annual International Symposium on Microelectronics, IMAPS 2012
Available from: 2016-09-22 Created: 2016-09-22 Last updated: 2017-08-09Bibliographically approved

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Citation style
  • apa
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