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Modeling of SiC power modules with double sided cooling
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
Fairchild Semiconductor GmbH.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
Fairchild Semiconductor GmbH.
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2014 (English)In: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014, IEEE Computer Society , 2014Conference paper, Published paper (Refereed)
Abstract [en]

Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved current density and thermal conductivity allows SiC-based power modules to be smaller than their silicon counterparts for comparable current densities. The active chip area can be reduced further by effectively cooling the devices. In this work, a new power module including SiC bipolar junction transistors (BJT) and diodes and integrated double sided cooling will be introduced. The target application of these modules is a new drive-train system for commercial electric vehicles. © 2014 IEEE.

Place, publisher, year, edition, pages
IEEE Computer Society , 2014.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13405DOI: 10.1109/EuroSimE.2014.6813864Scopus ID: 2-s2.0-84901422212ISBN: 9781479947904 (print)OAI: oai:DiVA.org:ri-13405DiVA: diva2:973612
Conference
2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014
Available from: 2016-09-22 Created: 2016-09-22 Last updated: 2017-08-09Bibliographically approved

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