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Mutiphysics study of RF/microwave planar devices: Effect of the input signal power
Universite de Bretagne Occidentale.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
Universite de Bretagne Occidentale.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.ORCID iD: 0000-0002-2232-7835
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2014 (English)In: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014, IEEE Computer Society , 2014Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, the effects of the input signal power on microwave planar devices are studied in detail. In this context, a complete multiphysics study is performed, involving the electro-thermo-mechanical coupling in microwave components. For this study, a multiphysics simulator is used. As shown, for moderate input powers, the device transfer function can be altered, mainly in terms of an increase of losses and a frequency shift. Additionally, hot spots are to be appeared, whose location is related to the electromagnetic field distribution of the passive device under test. Guidelines are also provided to estimate the average power handling capability (APHC) of planar components. As an example, the multiphysics analysis of a microstrip coupled-line filter centered at 42 GHz is tackled taken into account different thermal and mechanical boundary conditions. © 2014 IEEE.

Place, publisher, year, edition, pages
IEEE Computer Society , 2014.
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13402DOI: 10.1109/EuroSimE.2014.6813816Scopus ID: 2-s2.0-84901419510ISBN: 9781479947904 (print)OAI: oai:DiVA.org:ri-13402DiVA: diva2:973609
Conference
2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014
Available from: 2016-09-22 Created: 2016-09-22 Last updated: 2017-08-09Bibliographically approved

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CiteExportLink to record
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