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Thermo-mechanical simulations of SiC power modules with single and double sided cooling
RISE - Research Institutes of Sweden, Materials and Production, IVF.ORCID iD: 0000-0002-6483-8924
Chalmers University of Technology, Sweden.
Volvo Group Truck Technology, Sweden.
Fairchild Semiconductor GmbH, Germany.
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2015 (English)In: 2015 16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, Institute of Electrical and Electronics Engineers Inc. , 2015, article id 7103136Conference paper, Published paper (Refereed)
Abstract [en]

Effectively removing dissipated heat from the switching devices enables a higher current carrying capability per chip area ratio, thus leading to smaller or fewer devices for a given power requirement specification. Further, the use of SiC based devices has proven to increase the efficiency of the system thereby reducing the dissipated heat. Thermal models have been used to compare SiC power modules. Single and double sided cooling have been simulated. The simulated maximum temperatures were 141 °C for the single sided version and 119.7 °C for the double sided version. In addition, the reliability of a single sided module and thermally induced plastic strains of a double sided module have been investigated. A local model of the wire bond interface to the transistor metallization shows a 3‰ maximum increase in plastic strain during the power cycle. Simulations of the creep strain rates in the die attach solder layer for a power cycling loads also shows a 3‰ increase in creep strain per cycle.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2015. article id 7103136
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13395DOI: 10.1109/EuroSimE.2015.7103136Scopus ID: 2-s2.0-84944754431ISBN: 978-1-4799-9950-7 (electronic)OAI: oai:DiVA.org:ri-13395DiVA, id: diva2:973602
Conference
16th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2015), April 19-22, 2015, Budapest, Hungary
Available from: 2016-09-22 Created: 2016-09-22 Last updated: 2019-07-12Bibliographically approved

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Brinkfeldt, KlasAndersson, Dag

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CiteExportLink to record
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