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Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane
University of Bath.
University of Bath.
TIMA Laboratory (UJF CNRS G-INP).
Slovak Academy of Sciences.
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2012 (English)In: Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN 18626351, Vol. 9, p. 960-963Article in journal (Refereed)
Abstract [en]

This paper reports a high pressure sensor based on a GaN/AlGaN High Electron Mobility Transistor (HEMT) that uses its 375 mm thick sapphire substrate to provide a robust base and enables device operation up to at least 60 bar (6 MPa). Transduction of changes in ambient pressure occurs via piezoelectric and pyroelectric effects on the channel conductance. The HEMTs were strategically placed along an 8 mm 2 GaN/AlGaN/GaN/sapphire chip; where the central 4 mm diameter behaves as a pressure sensitive 'drumskin'. The location of peak response lies in the HEMT at the geometric centre of the drumskin, demonstrated by the change in I DS when the pressure was increased from 0 to 60 bar. The response of six strategically placed HEMTs along the chip's surface, were compared to a finite element model to predict sensor behaviour. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Place, publisher, year, edition, pages
2012. Vol. 9, p. 960-963
Keywords [en]
AlGaN/GaN, HEMT, Piezoelectricity, Stress sensor, Temperature
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13353DOI: 10.1002/pssc.201100371Scopus ID: 2-s2.0-84858817183OAI: oai:DiVA.org:ri-13353DiVA, id: diva2:973559
Available from: 2016-09-22 Created: 2016-09-22Bibliographically approved

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