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High temperature SiC packaging – a literature review and outlines of new concepts
RISE, Swerea, Swerea KIMAB.
2012 (English)Report (Refereed)
Abstract [en]

The introduction of SiC power devices for automotive applications requires new design of the module in order to utilise the full erformance. The commercial SiC components available today utilises package designs originally developed for silicon components, e.g. the Direct Bonded Copper (DBC) concept, where the SiC die is bonded to a copper plated ceramic insulator. However, the reliability during thermal cycling needs to be improved due a higher operating temperature. The thermal management needs also be improved due to a smaller chip area for the SiC die (approximately 30 % of the silicon a die). The reliability during thermal cycling can be improved by replacing the solder bond with e.g a sintered layer of a submicron silver paste, or an Ag foil. In the DBC concept the main thermal resistances is caused by the heat spreader and the interfacial thermal resistance between the heat spreader and the heat sink. In this study, three new concepts of the SiC die/heat spreader are proposed. In all of the proposed concepts, a silver coated molybdenum disc or a silver coated super soft copper disc is in between the SiC die and the heat spreader. The proposed concepts are: 1. The SiC die is mounted at the edge of the heat spreader, and the heat spreader is clamped between wo heat sinks. The applied interfacial pressure between the heat sinks and the heat spreader can be very high, due to that the SiC die is not subjected to the clamping pressre. This results in a low interfacial thermal resistance between the heat spreader and the heat sink. 2.The SiC device directly mounted on a heat spreader with electrically insulated water channels. Quick water couplings can be used to facilitate mounting and demounting. 3.The SiC die is placed perpendicular to the surface of the heat sink, and the SiC die is clamped in between two large heat spreaders. The design enables a very precise clamping force to be applied on the SiC die by using e.g. spring loaded brackets or clamps. The applied interfacial pressure between the heat sinks and the heat spreader can be very high, due to that the SiC die is not subjected to the clamping pressure.

Place, publisher, year, edition, pages
Swerea KIMAB AB , 2012.
Series
Rapport / Institutet för metallforskning, ISSN 1403-848X ; KIMAB-2012-110
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-13059OAI: oai:DiVA.org:ri-13059DiVA, id: diva2:973253
Available from: 2016-09-22 Created: 2016-09-22Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
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