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Analytical Extraction of a Schottky Diode Model from Broadband S-parameters
RISE, SP – Sveriges Tekniska Forskningsinstitut, SP Mätteknik, Kommunikation.
RISE, SP – Sveriges Tekniska Forskningsinstitut, SP Mätteknik, Kommunikation.
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2013 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 61, no 5, 1870-1878 p.Article in journal (Refereed)
Abstract [en]

We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. The challenges for a proper finger inductance and series resistance extraction are discussed and solutions are recommended. The proposed method is evaluated using three sets of S-parameter data for GaAs-based planar Schottky diodes, i.e., data from measurement up to 110 GHz and 3-D electromagnetic full-wave simulations up to 600 GHz. The extracted models agree well with the measured and simulated data.

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2013. Vol. 61, no 5, 1870-1878 p.
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Natural Sciences
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URN: urn:nbn:se:ri:diva-6497Local ID: 15825OAI: oai:DiVA.org:ri-6497DiVA: diva2:964335
Available from: 2016-09-08 Created: 2016-09-08 Last updated: 2017-11-21Bibliographically approved

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