Heterogenous InP Electro-Absorption Modulator with Si Waveguides for beyond 200 Gbps/λ Optical Interconnects 2024 (English)Conference paper, Published paper (Refereed)

Abstract [en]

We demonstrate an InP EAM with Si waveguides and achieve 256 Gbaud OOK, 170 Gbaud PAM4, 150 Gbaud PAM6, and 120 Gbaud PAM8 transmission over 500 meters of SMF below 6.25% OH HD-FEC threshold. 

Place, publisher, year, edition, pages

Institute of Electrical and Electronics Engineers Inc. , 2024.

Keywords [en]

Digital television; III-V semiconductors; Optical fiber communication; Optical fibers; Semiconducting indium phosphide; Silicon; Electroabsorption modulator(EAM); Optical interconnect; Si-waveguide; Indium phosphide

National Category

Electrical Engineering, Electronic Engineering, Information Engineering

Identifiers

URN: urn:nbn:se:ri:diva-73579Scopus ID: 2-s2.0-85194289232ISBN: 9781957171326 (electronic)OAI: oai:DiVA.org:ri-73579DiVA, id: diva2:1872874

Conference

2024 Optical Fiber Communications Conference and Exhibition, OFC 2024. San Diego, USA. 24 March 2024 through 28 March 2024

Available from: 2024-06-18 Created: 2024-06-18 Last updated: 2024-06-18Bibliographically approved

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No full text in DiVA

Scopus

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Pang, XiaodanOzolins, Oskars

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Sedulis, ArvidsSpolitis, SandisPang, XiaodanOzolins, Oskars

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Electrical Engineering, Electronic Engineering, Information Engineering

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