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Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation
Chalmers University of Technology, Sweden.ORCID iD: 0000-0003-1962-5572
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2020 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 102, no 16Article in journal (Refereed) Published
Abstract [en]

We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of an atomically thin Au layer on the Bu-L followed by annealing at 850 °C in an argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterization and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate-tunable ambipolar transport across the Dirac point, but we find no observable enhancement of spin-orbit effects in the graphene layer, despite its proximity to the intercalated Au layer. 

Place, publisher, year, edition, pages
American Physical Society , 2020. Vol. 102, no 16
Keywords [en]
Buffer layers; Electron transport properties; Gold; Silicon carbide; Spin orbit coupling, 4H silicon carbide; Ambipolar charge transports; Ambipolar transport; Argon atmospheres; Electron transport; Electronic device; Graphene layers; Spin-orbit effects, Graphene
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-68171DOI: 10.1103/PhysRevB.102.165403Scopus ID: 2-s2.0-85094890297OAI: oai:DiVA.org:ri-68171DiVA, id: diva2:1817269
Available from: 2023-12-05 Created: 2023-12-05 Last updated: 2023-12-05Bibliographically approved

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He, Hans

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