EnglishSvenskaNorsk
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Carbon nanotube field effect transistors with suspended graphene gates
University of Gothenburg, Sweden.ORCID iD: 0000-0002-7928-2076
Show others and affiliations
2011 (English)In: Nano Letters, ISSN 1530-6984, E-ISSN 1530-6992, Vol. 11, no 9, p. 3569-3575Article in journal (Refereed) Published
Place, publisher, year, edition, pages
ACS Publications , 2011. Vol. 11, no 9, p. 3569-3575
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-61147DOI: 10.1021/nl201280qOAI: oai:DiVA.org:ri-61147DiVA, id: diva2:1710427
Available from: 2022-11-13 Created: 2022-11-13 Last updated: 2022-11-23Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records

Lindahl, Niklas

Search in DiVA

By author/editor
Lindahl, Niklas
In the same journal
Nano Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 19 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.45.0
|
WCAG