Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by MeV Proton ImplantationShow others and affiliations
2022 (English)In: Materials Science Forum, Trans Tech Publications Ltd , 2022, Vol. 1062 MSF, p. 442-446Conference paper, Published paper (Refereed)
Abstract [en]
In this paper, proton implantation with different combinations of MeV energies and doses from 2×109 to 1×1011 cm-2 is used to create defects in the drift region of 10 kV 4H-SiC PiN diodes to obtain a localized drop in the SRH lifetime. On-state and reverse recovery behaviors are measured to observe how MeV proton implantation influences these devices and values of reverse recovery charge Qrr are extracted. These measurements are carried out under different temperatures, showing that the reverse recovery behavior is sensitive to temperature due to the activation of incompletely ionized p-type acceptors. The results also show that increasing proton implantation energies and fluencies can have a strong effect on diodes and cause lower Qrr and switching losses, but also higher on-state voltage drop and forward conduction losses. The trade-off between static and dynamic performance is evaluated using Qrr and forward voltage drop. Higher fluencies, or energies, help to improve the turn-off performance, but at a cost of the static performance. © 2022 The Author(s).
Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2022. Vol. 1062 MSF, p. 442-446
Keywords [en]
Proton Implantation, Reverse Recovery, Shockley-Read-Hall (SRH) Lifetime, Switching Losses
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:ri:diva-59860DOI: 10.4028/p-5po40aScopus ID: 2-s2.0-85134250220ISBN: 9783035727609 (print)OAI: oai:DiVA.org:ri-59860DiVA, id: diva2:1685222
Conference
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021,Virtual, Online24 October 2021 through 28 October 2021
Note
Funding details: 2017-00646-9; Funding text 1: The Ion Technology Centre, ITC, in Uppsala, Sweden is acknowledged for proton implantations (contract 2017-00646-9).
2022-08-022022-08-022024-02-06Bibliographically approved