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Highly efficient UV detection in a metal-semiconductor-metal detector with epigraphene
RISE Research Institutes of Sweden, Safety and Transport, Measurement Technology. Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
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2022 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 120, no 19, article id 191101Article in journal (Refereed) Published
Abstract [en]

We show that epitaxial graphene on silicon carbide (epigraphene) grown at high temperatures (T >1850 °C) readily acts as material for implementing solar-blind ultraviolet (UV) detectors with outstanding performance. We present centimeter-sized epigraphene metal-semiconductor-metal (MSM) detectors with a peak external quantum efficiency of η ∼85% for wavelengths λ = 250-280 nm, corresponding to nearly 100% internal quantum efficiency when accounting for reflection losses. Zero bias operation is possible in asymmetric devices, with the responsivity to UV remaining as high as R = 134 mA/W, making this a self-powered detector. The low dark currents Io ∼50 fA translate into an estimated record high specific detectivity D = 3.5 × 1015 Jones. The performance that we demonstrate, together with material reproducibility, renders epigraphene technologically attractive to implement high-performance planar MSM devices with a low processing effort, including multi-pixel UV sensor arrays, suitable for a number of practical applications. © 2022 Author(s).

Place, publisher, year, edition, pages
American Institute of Physics Inc. , 2022. Vol. 120, no 19, article id 191101
Keywords [en]
Efficiency, Metals, Quantum efficiency, Silicon detectors, Epitaxial graphene, External quantum efficiency, Highest temperature, Internal quantum efficiency, Metal-semiconductor-metal detectors, Performance, Reflection loss, Solar blind ultraviolet, Ultra violet detection, Ultraviolet detection, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-59328DOI: 10.1063/5.0090219Scopus ID: 2-s2.0-85130080682OAI: oai:DiVA.org:ri-59328DiVA, id: diva2:1672959
Note

Funding details: Stiftelsen för Strategisk Forskning, SSF, 2019-00068, GMT14-0077, RMA15-0024; Funding text 1: This work was jointly supported by the Swedish Foundation for Strategic Research (Nos. GMT14-0077 and RMA15-0024), Chalmers Excellence Initiative Nano, and 2D TECH VINNOVA competence Center (Ref. No. 2019-00068). This work was performed in part at Myfab Chalmers.

Available from: 2022-06-20 Created: 2022-06-20 Last updated: 2022-06-20Bibliographically approved

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