EnglishSvenskaNorsk
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Introduction to the focus issue on wide bandgap power semiconductors
Argonne National Laboratory, USA.
RISE, Swedish ICT, Acreo.ORCID iD: 0000-0002-9512-2689
Kwansei Gakuin University, Japan.
2013 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, E-ISSN 2162-8777, Vol. 2, no 8, p. Y3-Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2013. Vol. 2, no 8, p. Y3-
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:ri:diva-47577DOI: 10.1149/2.019308jssScopus ID: 2-s2.0-84887393792OAI: oai:DiVA.org:ri-47577DiVA, id: diva2:1463509
Available from: 2020-09-02 Created: 2020-09-02 Last updated: 2024-02-06Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records

Bakowski, Mietek

Search in DiVA

By author/editor
Bakowski, Mietek
By organisation
Acreo
In the same journal
ECS Journal of Solid State Science and Technology
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 7 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.45.0
|
WCAG