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Comparison of Thermal Stress during Short-Circuit in Different Types of 1.2 kV SiC Transistors Based on Experiments and Simulations
KTH Royal Institute of Technology, Sweden.
KTH Royal Institute of Technology, Sweden.
RISE Research Institutes of Sweden.
RISE Research Institutes of Sweden, Digital Systems, Smart Hardware.
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2020 (English)In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948Article in journal (Refereed) Epub ahead of print
Abstract [en]

The temperature evolution during a short-circuit fault in the dies of three different Silicon Carbide 1200-V power devices is presented. Transient electro-thermal simulations were performed based on the reconstructed structure of commercially available devices. The simulations reveal the location of the hottest point in each device. The nonisothermal electrical analysis supports the necessity to turn OFF short-circuit events rapidly to protect the immunity of the device after a fault. The analysis also reveal differences in delay required to turn OFF devices depending on their type. A thorough analysis of the temperature rise in the die of the SiC MOSFET device is also presented, where the maximum temperature with regards to different fault cases and circuit characteristics is presented. The impact of the gate resistance, circuit inductance, detection time, drain-source voltage, and gate-source voltage are considered.

Place, publisher, year, edition, pages
2020.
Keywords [en]
Silicon carbide, MOSFET, JFETs, Circuit faults, Temperature, Integrated circuit modeling, Performance evaluation, Silicon Carbide (SiC), JFET, BJT, Reliability, Device Simuation, Short-circuit currents, Failure Analysis
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-44538DOI: 10.1109/TIE.2020.2972442OAI: oai:DiVA.org:ri-44538DiVA, id: diva2:1415242
Available from: 2020-03-17 Created: 2020-03-17 Last updated: 2020-03-17Bibliographically approved

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