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Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO2/4H-SiC MOS structures
RISE, Swedish ICT, Acreo. Saint Petersburg Electrotechnical University, Russia.
Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany.
Saint Petersburg Electrotechnical University, Russia.
Saint Petersburg Electrotechnical University, Russia.
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2015 (English)In: Mater. Sci. Forum, Trans Tech Publications Ltd , 2015, p. 133-138Conference paper, Published paper (Refereed)
Abstract [en]

The electrical properties of metal-oxide-semiconductor (MOS) devices fabricated using dry oxidation on phosphorus-implanted n-type 4H-SiC (0001) epilayers have been investigated. MOS structures were compared in terms of interface traps and reliability with reference sample which was produced by dry oxidation under the same conditions. The notably lower interface traps density measured in MOS capacitor with phosphorus concentration exceeding 1018 cm-3 at the SiO2/SiC interface was attributed to interface traps passivation by incorporated phosphorus ions. © (2015) Trans Tech Publications, Switzerland.

Place, publisher, year, edition, pages
Trans Tech Publications Ltd , 2015. p. 133-138
Keywords [en]
4H-SiC, Implantation, Interface, MOS, Oxidation, Oxide, Phosphorus, Traps, TZDB, Dielectric devices, Interfaces (materials), Ion implantation, Metals, Molybdenum, Oxide semiconductors, Oxides, Silica, Silicon carbide, Wide band gap semiconductors, Metal oxide semiconductor, Phosphorus concentration, Phosphorus ions, Reference samples, SiO2/SiC interface, MOS devices
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Engineering and Technology
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URN: urn:nbn:se:ri:diva-43222DOI: 10.4028/www.scientific.net/MSF.806.133Scopus ID: 2-s2.0-84921490375ISBN: 9783038352945 (print)OAI: oai:DiVA.org:ri-43222DiVA, id: diva2:1385182
Conference
17 June 2013 through 19 June 2013
Available from: 2020-01-13 Created: 2020-01-13 Last updated: 2020-01-20Bibliographically approved

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