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CMOS-integrated Si/SiGe quantum-well infrared microbolometer focal plane arrays manufactured with very large-scale heterogeneous 3-d integration
KTH Royal Institute of Technology, Sweden.
Sensonor AS, Norway.
Sensonor AS, Norway.
Sensonor AS, Norway.
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2015 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 0792-1233, Vol. 21, no 4, article id 6899624Article in journal (Refereed) Published
Abstract [en]

We demonstrate infrared focal plane arrays utilizing monocrystalline silicon/silicon-germanium (Si/SiGe) quantum-well microbolometers that are heterogeneously integrated on top of CMOS-based electronic read-out integrated circuit substrates. The microbolometers are designed to detect light in the long wavelength infrared (LWIR) range from 8 to 14 μm and are arranged in focal plane arrays consisting of 384 × 288 microbolometer pixels with a pixel pitch of 25 μm × 25 μm. Focal plane arrays with two different microbolometer designs have been implemented. The first is a conventional single-layer microbolometer design and the second is an umbrella design in which the microbolometer legs are placed underneath the microbolometer membrane to achieve an improved pixel fill-factor. The infrared focal plane arrays are vacuum packaged using a CMOS compatible wafer bonding and sealing process. The demonstrated heterogeneous 3-D integration and packaging processes are implemented at wafer-level and enable independent optimization of the CMOS-based integrated circuits and the microbolometer materials. All manufacturing is done using standard semiconductor and MEMS processes, thus offering a generic approach for integrating CMOS-electronics with complex miniaturized transducer elements

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2015. Vol. 21, no 4, article id 6899624
Keywords [en]
Long-wavelength infrared imaging, LWIR, MEMS, Si/SiGe quantum-wells, wafer-level vacuum packaging, thermal imaging, uncooled microbolometer, very large-scale heterogeneous 3-D integration, Bolometers, Chip scale packages, CMOS integrated circuits, Focal plane arrays, Focusing, Infrared detectors, Infrared devices, Infrared imaging, Infrared radiation, Integrated circuit design, Monocrystalline silicon, Pixels, Semiconductor quantum wells, Silicon wafers, Substrates, Temperature sensors, Thermography (imaging), Three dimensional integrated circuits, VLSI circuits, Wafer bonding, 3-D integration, Long-wavelength infrared, Uncooled microbolometers, Wafer level vacuum packaging, MOEMS
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-42046DOI: 10.1109/JSTQE.2014.2358198Scopus ID: 2-s2.0-84907855956OAI: oai:DiVA.org:ri-42046DiVA, id: diva2:1378603
Available from: 2019-12-13 Created: 2019-12-13 Last updated: 2019-12-13Bibliographically approved

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