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Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka-and Q-Band LNAs
Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
Low Noise Factory AB, Sweden.
Chalmers University of Technology, Sweden.
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2017 (English)In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 65, no 12, p. 5171-5180, article id 8103905Article in journal (Refereed) Published
Abstract [en]

We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka-and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu text{m} exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB ± 0.8 dB. To our knowledge, the Ka-and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs. © 1963-2012 IEEE.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers Inc. , 2017. Vol. 65, no 12, p. 5171-5180, article id 8103905
Keywords [en]
cryogenics, InP HEMT, low-noise amplifier (LNA), monolithic microwave-integrated circuit (MMIC), stability, wideband, Chromium compounds, Convergence of numerical methods, Drain current, High electron mobility transistors, III-V semiconductors, Indium compounds, Indium phosphide, Logic gates, Microwave integrated circuits, Monolithic integrated circuits, Monolithic microwave integrated circuits, Semiconducting indium, Semiconducting indium compounds, Semiconducting indium phosphide, Semiconductor materials, Temperature, Transconductance, Cryogenic operations, Cryogenic stability, Gate resistance, Monolithic microwave integrated circuits (MMIC), Noise temperature, Ultra low noise, Wide-band, Low noise amplifiers
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:ri:diva-38117DOI: 10.1109/TMTT.2017.2765318Scopus ID: 2-s2.0-85034252482OAI: oai:DiVA.org:ri-38117DiVA, id: diva2:1294522
Available from: 2019-03-07 Created: 2019-03-07 Last updated: 2019-03-07Bibliographically approved

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