Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Short Reach Optical Interconnects with Single Externally Modulated Laser Operated in C-Band
RISE - Research Institutes of Sweden, ICT, Acreo.ORCID iD: 0000-0001-9839-7488
KTH Royal Institute of Technology, Sweden.
RISE - Research Institutes of Sweden, ICT, Acreo.ORCID iD: 0000-0003-3754-0265
KTH Royal Institute of Technology, Sweden.
Show others and affiliations
2018 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Datacenters experience massive traffic growth due to expansive growth of cloud services and online gaming [1]. This trend leads to technical and economic challenges to keep up scalability for bandwidth in short reach optical interconnects. It is of critical importance to enable a cost-efficient solution for 400 Gbps links [2]. Solution for 400 GbE based on four optical lanes [3] or even two optical lanes [4] may be more attractive to reduce power consumption and complexity of parallelism. This requires InP and silicon opto-electronic components with more than 70 GHz bandwidth [2]. In this talk, we report on several experimental demonstrations for short reach optical interconnects in C-band. We review demonstrations of up to 200 Gbit/s 4-pulse amplitude modulation (PAM) [4] and up to 200 Gbit/s discrete multitone (DMT) [5] transmission with a cost-efficient monolithically integrated externally modulated laser (EML) with large bandwidth. Related digital signal processing techniques are also discussed in terms of practical implementation and complexity, paving the way for cost-effective interconnects using high speed advanced modulation formats.

Place, publisher, year, edition, pages
2018.
Keywords [en]
III-V semiconductors, indium compounds, integrated optoelectronics, optical communication equipment, optical interconnections, optical links, optical modulation, pulse amplitude modulation, silicon, optical lanes, short reach optical interconnects, 4-pulse amplitude modulation, cost-efficient monolithically integrated externally modulated laser, cost-effective interconnects, massive traffic growth, cost-efficient solution, single externally modulated laser, frequency 70.0 GHz, bit rate 200.0 Gbit/s, Lasers, Bandwidth, High-speed optical techniques, Integrated optics, Optical signal processing
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-37654DOI: 10.1109/ICTON.2018.8473743OAI: oai:DiVA.org:ri-37654DiVA, id: diva2:1283571
Conference
2018 20th International Conference on Transparent Optical Networks (ICTON)
Available from: 2019-01-29 Created: 2019-01-29 Last updated: 2019-01-29Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Authority records BETA

Ozolins, OskarsUdalcovs, Aleksejs

Search in DiVA

By author/editor
Ozolins, OskarsUdalcovs, Aleksejs
By organisation
Acreo
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.35.7