Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Failure mechanism assessment of TO-247 packaged SiC power devices
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.ORCID iD: 0000-0002-6483-8924
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.ORCID iD: 0000-0002-9505-0822
RISE - Research Institutes of Sweden, Swerea, Swerea IVF.ORCID iD: 0000-0002-2232-7835
Show others and affiliations
2018 (English)In: ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2018, 2018, article id V001T04A016Conference paper, Published paper (Refereed)
Abstract [en]

As the automotive industry shifts towards the electrification of drive trains, the efficiency of power electronics becomes more important. The use of silicon carbide (SiC) devices in power electronics has shown several benefits in efficiency, blocking voltage and high temperature operation. In addition, the ability of SiC to operate at higher frequencies due to lower switching losses can result in reduced weight and volume of the system, which also are important factors in vehicles. However, the reliability of packaged SiC devices is not yet fully assessed. Previous work has predicted that the different material properties of SiC compared to Si could have a large influence on the failure mechanisms and reliability. For example, the much higher elastic modulus of SiC compared to Si could increase strain on neighboring materials during power cycling. In this work, the failure mechanisms of packaged Si- and SiC-based power devices have been investigated following power cycling tests. The packaged devices were actively cycled in 4.5 s heating and 20 s cooling at ΔT = 60 - 80 K. A failure analysis using micro-focus X-ray and scanning acoustic microscopy (SAM) was carried out in order to determine the most important failure mechanisms. The results of the analysis indicate that the dominant failure mechanism is wire bond liftoff at the device chip for all of the SiC-based devices. Further analysis is required to determine the exact failure mechanisms of the analyzed Si-based devices. In addition, the SiC-based devices failed before the Si-based devices, which could be a result of the different properties of the SiC material.

Place, publisher, year, edition, pages
2018. article id V001T04A016
Keywords [en]
Automotive industry, Efficiency, Electric railroads, Electronics industry, Electronics packaging, Failure (mechanical), High temperature operations, Microsystems, Outages, Silicon carbide, Blocking voltage, Failure mechanism, Higher frequencies, Lower switching loss, Power cycling tests, Scanning Acoustic Microscopy, Si-based devices, Silicon carbides (SiC), Power semiconductor devices
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-37000DOI: 10.1115/IPACK2018-8385Scopus ID: 2-s2.0-85057279573ISBN: 9780791851920 (print)OAI: oai:DiVA.org:ri-37000DiVA, id: diva2:1276749
Conference
ASME 2018 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, InterPACK 2018, 27 August 2018 through 30 August 2018
Note

 Funding details: Energimyndigheten, 2017-001699;

Available from: 2019-01-08 Created: 2019-01-08 Last updated: 2019-01-08Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Brinkfeldt, KlasLövberg, AndreasAndersson, Dag

Search in DiVA

By author/editor
Brinkfeldt, KlasLövberg, AndreasAndersson, Dag
By organisation
Swerea IVF
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 62 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.35.7