Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Stable and Tunable Charge Carrier Control of Graphene for Quantum Resistance Metrology
Chalmers University of Technology, Sweden.
Chalmers University of Technology, Sweden.
RISE - Research Institutes of Sweden, Safety and Transport, Measurement Science and Technology.ORCID iD: 0000-0003-2330-9898
RISE - Research Institutes of Sweden, Safety and Transport, Measurement Science and Technology.
Show others and affiliations
2018 (English)In: 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), 2018Conference paper, Published paper (Refereed)
Abstract [en]

Here we demonstrate a stable and tunable method to alter the carrier concentration of epitaxial graphene grown on silicon carbide. This technique relies on chemical doping by an acceptor molecule. Through careful tuning one can produce chemically doped graphene quantum resistance devices which show long-term stability in ambient conditions and have performance comparable to that of GaAs quantum resistance standards. This development paves the way for controlled device fabrication of graphene quantum hall resistance standards, which can be reliably tailored to operate below 5 T and above 4 K out-of-the-box, without further adjustments from the end-user.

Place, publisher, year, edition, pages
2018.
Keywords [en]
chemical doping, graphene, measurement standards, quantum hall effect, Carrier concentration, Gallium arsenide, Graphene devices, III-V semiconductors, Silicon carbide, Acceptor molecules, Ambient conditions, Device fabrications, Long term stability, Quantum Hall resistance, Quantum resistance
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-36603DOI: 10.1109/CPEM.2018.8501252Scopus ID: 2-s2.0-85057054632ISBN: 9781538609736 (print)OAI: oai:DiVA.org:ri-36603DiVA, id: diva2:1271292
Conference
2018 Conference on Precision Electromagnetic Measurements, CPEM 2018, 8 July 2018 through 13 July 2018
Note

Funding details: National Research Foundation of Korea, NRF; Funding details: VINNOVA; Funding details: Vetenskapsrådet, VR; Funding details: Stiftelsen för Strategisk Forskning, SSF; Funding details: Nanoscience and Nanotechnology Area of Advance, Chalmers Tekniska Högskola; Funding details: Sjögren’s Syndrome Foundation, SSF, IS14-0053; Funding details: Knut och Alice Wallenbergs Stiftelse

Available from: 2018-12-17 Created: 2018-12-17 Last updated: 2018-12-17Bibliographically approved

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full textScopus

Authority records BETA

Bergsten, Tobias

Search in DiVA

By author/editor
Bergsten, Tobias
By organisation
Measurement Science and Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 3 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
v. 2.35.7