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Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
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2014 (English)In: Materials Research Society Symposium Proceedings, 2014Conference paper, Published paper (Refereed)
Abstract [en]

An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).

Place, publisher, year, edition, pages
2014.
Keywords [en]
devices, electrical properties, semiconducting, Electric field effects, Electric properties, Field effect semiconductor devices, Field effect transistors, Nitrides, Semiconductor devices, Silicon carbide, Silicon nitride, Silicon oxides, Electrical characterization, Interface traps, Inversion channels, Metal oxide semiconductor, P-type 4H-SiC, SiC/siO2-interfaces, MOS devices
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-35491DOI: 10.1557/opl.2014.619Scopus ID: 2-s2.0-84924530109OAI: oai:DiVA.org:ri-35491DiVA, id: diva2:1263132
Conference
2014 MRS Spring Meeting, 21 April 2014 through 25 April 2014
Available from: 2018-11-14 Created: 2018-11-14 Last updated: 2018-11-14Bibliographically approved

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