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Full epitaxial trench type buried grid SiC JBS diodes
RISE, Swedish ICT, Acreo.
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2014 (English)In: ECS Transactions, 2014, no 7, p. 289-293Conference paper, Published paper (Refereed)
Abstract [en]

The paper presents the advanced concept of fully epitaxial SiC junction barrier Schottky (JBS) diodes. It combines trench etching with embedded epitaxial re-growth and enables cost-efficient manufacturing. Fabricated devices are rated for 20A / 1200V and have leakage currents below 0.1μA at 1000V blocking voltage.

Place, publisher, year, edition, pages
2014. no 7, p. 289-293
Keywords [en]
Gallium nitride, Leakage currents, Nitrides, Schottky barrier diodes, Silicon, Blocking voltage, Cost-efficient, Fabricated device, Jbs diodes, Junction barrier Schottky diodes, Re-growth, Trench etching, Silicon carbide
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-35494DOI: 10.1149/06407.0289ecstScopus ID: 2-s2.0-84921019338OAI: oai:DiVA.org:ri-35494DiVA, id: diva2:1263128
Conference
Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 4 - 2014 ECS and SMEQ Joint International Meeting, 5 October 2014 through 9 October 2014
Available from: 2018-11-14 Created: 2018-11-14 Last updated: 2018-11-14Bibliographically approved

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