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Comparative study of 4H-SiC DMOSFETs with N2O thermal oxide and deposited oxide with post oxidation anneal
RISE, Swedish ICT, Acreo.
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2014 (English)In: Mater. Sci. Forum, 2014, p. 989-992Conference paper, Published paper (Refereed)
Abstract [en]

Two kinds of gate oxides, direct thermal oxidation in a nitrous oxide ambient at 1250°C (TGO) and a PECVD oxide followed by a post deposition oxidation in nitrous oxide ambient at 1150°C (DGO) were studied. DGO showed a lower interface trap density and was able to provide a higher current as being implemented in MOSFETs through the improved channel mobility. However the 6.45 MV/cm average breakdown field of DGO is lower than the 10.1 MV/cm breakdown field of TGO. The lower breakdown field, more leaky behavior and the existence of multiple breakdown mechanisms suggest that DGO needs further improvements before it can be used in real applications.

Place, publisher, year, edition, pages
2014. p. 989-992
Keywords [en]
4H-SiC, Deposited oxide, Mobility, MOSFET, Reliability, Carrier mobility, MOSFET devices, Nitrogen oxides, Oxidation, Breakdown mechanism, Comparative studies, Deposited oxides, Interface trap density, MOS-FET, Postdeposition oxidation, Real applications, Silicon carbide
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Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-35509DOI: 10.4028/www.scientific.net/MSF.778-780.989Scopus ID: 2-s2.0-84896090432ISBN: 9783038350101 (print)OAI: oai:DiVA.org:ri-35509DiVA, id: diva2:1263109
Conference
29 September 2013 through 4 October 2013, Miyazaki
Available from: 2018-11-14 Created: 2018-11-14 Last updated: 2018-11-14Bibliographically approved

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