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Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
RISE, Swedish ICT, Acreo.
RISE, Swedish ICT, Acreo.
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2014 (English)In: Mater. Sci. Forum, 2014, p. 575-578Conference paper, Published paper (Refereed)
Abstract [en]

The effect of phosphorus (P) on the electrical properties of the 4H-SiC/SiO2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps Dit with energy EC-Eit > 0.3 V for P+-implanted samples with [P]interface = 1.5 · 1018 cm-3 in the SiC layer at the interface. .

Place, publisher, year, edition, pages
2014. p. 575-578
Keywords [en]
Conductance method, Interface traps, Mos interface, Phosphorus ion implantation, Electric properties, Ion implantation, Oxidation, Secondary ion mass spectrometry, Silicon carbide, C-V measurement, Implanted samples, Oxidation front, Phosphorus ion implantations, Thermal oxidation, Phosphorus
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-35508DOI: 10.4028/www.scientific.net/MSF.778-780.575Scopus ID: 2-s2.0-84896097011ISBN: 9783038350101 (print)OAI: oai:DiVA.org:ri-35508DiVA, id: diva2:1263107
Conference
29 September 2013 through 4 October 2013, Miyazaki
Available from: 2018-11-14 Created: 2018-11-14 Last updated: 2018-11-14Bibliographically approved

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