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Improving the morphological stability of nickel germanide by tantalum and tungsten additions
Uppsala University, Sweden.
Uppsala University, Sweden.
RISE - Research Institutes of Sweden, Swerea, Swerea KIMAB. Uppsala University, Sweden.
CNRS-Université d'Aix-Marseille, France.
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2018 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 112, no 10, article id 103102Article in journal (Refereed) Published
Abstract [en]

To enhance the morphological stability of NiGe, a material of interest as a source drain-contact in Ge-based field effect transistors, Ta or W, is added as either an interlayer or a capping layer. The efficacy of this Ta or W addition is evaluated with pure NiGe as a reference. While interlayers increase the NiGe formation temperature, capping layers do not retard the NiGe formation. Regardless of the initial position of Ta or W, the morphological stability of NiGe against agglomeration can be improved by up to 100 degrees C. The improved thermal stability can be ascribed to an inhibited surface diffusion, owing to Ta or W being located on top of NiGe after annealing, as confirmed by means of transmission electron microscopy, Rutherford backscattering spectrometry, and atom probe tomography. The latter also shows a 0.3 at. % solubility of Ta in NiGe at 450 degrees C, while no such incorporation of W is detectable. 

Place, publisher, year, edition, pages
2018. Vol. 112, no 10, article id 103102
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Natural Sciences
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URN: urn:nbn:se:ri:diva-33721DOI: 10.1063/1.5019440OAI: oai:DiVA.org:ri-33721DiVA, id: diva2:1197811
Available from: 2018-04-14 Created: 2018-04-14 Last updated: 2018-08-08Bibliographically approved

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