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Electrical performance of directly attached SiC power MOSFET bare dies in a half-bridge configuration
KTH Royal Institute of Technology, Sweden.
KTH Royal Institute of Technology, Sweden.
RISE - Research Institutes of Sweden, ICT, Acreo.
2017 (English)In: 2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, 2017, p. 417-421Conference paper, Published paper (Refereed)
Abstract [en]

The demand for high-efficiency power converters is increasing continuously. The switching losses are typically significant in power converters. During the switching time, the component is exposed to a considerable voltage and current causing power loss. The switching time is limited by parasitic inductance produced by traces and interconnections inside and outside the package of a device. Moreover, the parasitic inductances at the input-terminal together with the Miller capacitance generate oscillations causing instability and additional losses. In order to eliminate the package parasitic inductance, four 1.2kV SiC-MOSFET bare dies, two in parallel in each position, were directly attached to a PCB sandwich designed as a half bridge. The obtained structure forms a planar power module. From ANSYS Q3D simulations it was found that the parasitic inductance between drain and source for each transistor in the proposed planar module could be reduced 92 % compared to a TO247 package. The planar module was also tested as a dc-dc converter. Switching waveforms from these experiments are also presented

Place, publisher, year, edition, pages
2017. p. 417-421
Keywords [en]
bare die, converter, fast switching, low inductive circuit, parasitic inductance, planar Module, SiC MOSTEF, Capacitance, DC-DC converters, Electric inverters, Inductance, MOSFET devices, Power converters, Printed circuit boards, Silicon carbide, Silicon compounds, Switching, Bare dies, Inductive circuits, Parasitic inductances, Power MOSFET
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:ri:diva-33138DOI: 10.1109/IFEEC.2017.7992074Scopus ID: 2-s2.0-85034023937ISBN: 9781509051571 OAI: oai:DiVA.org:ri-33138DiVA, id: diva2:1179089
Conference
3rd IEEE International Future Energy Electronics Conference and ECCE Asia, IFEEC - ECCE Asia 2017, 3 June 2017 through 7 June 2017
Available from: 2018-01-31 Created: 2018-01-31 Last updated: 2018-01-31Bibliographically approved

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