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Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with GaN-on-SiC HEMTs
RISE - Research Institutes of Sweden.
Jönköping University.
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2016 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 897, no May, p. 715-718Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2016. Vol. 897, no May, p. 715-718
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Reliability and Maintenance
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URN: urn:nbn:se:ri:diva-32944DOI: 10.4028/www.scientific.net/MSF.897.715OAI: oai:DiVA.org:ri-32944DiVA, id: diva2:1169828
Conference
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM. 25-29 Sept. 2016.
Available from: 2017-12-29 Created: 2017-12-29 Last updated: 2018-01-10Bibliographically approved

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