Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with GaN-on-SiC HEMTsShow others and affiliations
2016 (English)In: Materials Science Forum, 2016, Vol. 897, no May, p. 715-718Conference paper, Published paper (Refereed)
Abstract [en]
RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015AQEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn63Pb36Ag2 and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and TgonTM 805) for PCB attachment to liquid cold plate were tested for thermomechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.
Place, publisher, year, edition, pages
2016. Vol. 897, no May, p. 715-718
Series
Materials Science Forum, ISSN 0255-5476
Keywords [en]
GaN (gallium nitride), HEMT (high-electron-mobility transistor), PC (power cycle), Reliability, RF (radio frequency) power amplifier, SiC (silicon carbide), TC (thermal cycle)
National Category
Reliability and Maintenance
Identifiers
URN: urn:nbn:se:ri:diva-32944DOI: 10.4028/www.scientific.net/MSF.897.715Scopus ID: 2-s2.0-85019987879ISBN: 9783035710434 (print)OAI: oai:DiVA.org:ri-32944DiVA, id: diva2:1169828
Conference
11th European Conference on Silicon Carbide and Related Materials (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017-12-292017-12-292024-04-05Bibliographically approved