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Investigation of the surge current capability of the body diode of SiC MOSFETs for HVDC applications
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2016 (English)In: 2016 18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe, 2016Conference paper, Published paper (Refereed)
Abstract [en]

The surge current capability of the body-diode of SiC MOSFETs is experimentally analyzed in order to investigate the possibility of using SiC MOSFETs for HVDC applications. SiC MOSFET discrete devices and modules have been tested with surge currents up to 10 times the rated current and for durations up to 2 ms. Although the presence of stacking faults cannot be excluded, the experiments reveal that the failure may occur due to the latch-up of the parasitic n-p-n transistor located in the SiC MOSFET.

Place, publisher, year, edition, pages
2016.
Keywords [en]
Diode, Faults, MOSFET, Reliability, Silicon Carbide (SiC), Voltage Source Converter (VSC), DC power transmission, Diodes, Faulting, HVDC power transmission, Power electronics, Silicon carbide, Stacking faults, Discrete devices, MOS-FET, N-p-n transistors, Rated currents, SiC MOSFETs, Silicon carbides (SiC), Surge current, Voltage source converters, MOSFET devices
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32565DOI: 10.1109/EPE.2016.7695448Scopus ID: 2-s2.0-84996938039ISBN: 9789075815245 (print)OAI: oai:DiVA.org:ri-32565DiVA, id: diva2:1156145
Conference
18th European Conference on Power Electronics and Applications, EPE 2016 ECCE Europe, 5 September 2016 through 9 September 2016
Available from: 2017-11-10 Created: 2017-11-10 Last updated: 2018-01-13Bibliographically approved

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