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Impact of package parasitics on switching performance
RISE, Swedish ICT, Acreo.
2016 (English)In: 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015, 2016, p. 1057-1060Conference paper, Published paper (Refereed)
Abstract [en]

The package parasitics are a serious obstacle to the high-speed switching, which is necessary in order to reduce the switching power losses or reduce the size of power converters. In order to design new packages suitable for Silicon Carbide (SiC) power transistors, it is necessary to extract the parasitics of different packages and be able to predict the switching performance of the power devices placed in these packages. This paper presents two ways of simulating the switching performance in a half-bridge power module with SiC MOSFETs. The results show that the parasitic inductances in the power module slow down the switching, lead to poor current sharing, and together with the parasitic capacitances lead to oscillations. These negative effects can cause failures, increased losses, and electromagnetic compatibility issues.

Place, publisher, year, edition, pages
2016. p. 1057-1060
Keywords [en]
Module, MOSFET, Parasitic inductance, Parasitics, Silicon Carbide (SiC), Switching, Capacitance, Electric power systems, Inductance, MOSFET devices, Power semiconductor devices, Silicon, Silicon carbide, MOS-FET, Parasitic inductances, Silicon carbides (SiC)
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32592DOI: 10.4028/www.scientific.net/MSF.858.1057Scopus ID: 2-s2.0-84971539866ISBN: 9783035710427 (print)OAI: oai:DiVA.org:ri-32592DiVA, id: diva2:1156113
Conference
4 October 2015 through 9 October 2015
Available from: 2017-11-10 Created: 2017-11-10 Last updated: 2018-01-13Bibliographically approved

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  • apa
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