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Investigation of pressure dependent thermal contact resistance between silver metallized SiC chip and molybdenum substrate and between molybdenum substrate and bulk copper
RISE - Research Institutes of Sweden (2017-2019), Materials and Production, KIMAB.ORCID iD: 0000-0002-8712-9899
RISE, Swedish ICT, Acreo.
KTH Royal Institute of Technology, Sweden.
RISE, Swedish ICT, Acreo.ORCID iD: 0000-0002-9512-2689
2016 (English)In: Materials Science Forum, 2016, Vol. 858, p. 1061-1065Conference paper, Published paper (Refereed)
Abstract [en]

Thermal contact resistances between a silver metallized SiC chip and a Molybdenum substrate and between the Molybdenum substrate and bulk Copper were measured in a heat transfer experiment. An experimental method to separate thermal contact resistances in a multilayer heat transfer path was used to extract the layer-specific contact resistances. The experimental results were compared with theory based calculations and also with 3-D computational fluid dynamics (CFD) simulation results. The results show significant pressure dependence of the thermal contact resistance and the results show higher thermal contact resistance per unit area between the bulk SiC chip and Molybdenum than between Molybdenum and bulk Copper.

Place, publisher, year, edition, pages
2016. Vol. 858, p. 1061-1065
Keywords [en]
DBC substrate, Heat transfer, Molybdenum substrate, Pressure dependence, SiC, Thermal contact resistance, Computation theory, Computational fluid dynamics, Contact resistance, Copper, Metallizing, Molybdenum, Silicon carbide, Silver, Substrates, Thermal conductivity of solids, Computational fluid dynamics simulations, Experimental methods, Per unit, Pressure dependent, Specific contact resistances, Heat resistance
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32601DOI: 10.4028/www.scientific.net/MSF.858.1061Scopus ID: 2-s2.0-84971578896ISBN: 9783035710427 (print)OAI: oai:DiVA.org:ri-32601DiVA, id: diva2:1156100
Conference
16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), October 4-9, 2015, Sicily, Italy
Available from: 2017-11-10 Created: 2017-11-10 Last updated: 2024-02-07Bibliographically approved

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Toth-Pal, ZsoltBakowski, Mietek

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