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Short-Circuit Protection Circuits for Silicon-Carbide Power Transistors
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2016 (English)In: IEEE transactions on industrial electronics (1982. Print), ISSN 0278-0046, E-ISSN 1557-9948, Vol. 63, no 4, p. 1995-2004, article id 7349199Article in journal (Refereed) Published
Abstract [en]

An experimental analysis of the behavior under short-circuit conditions of three different silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up a substantial voltage, which is favorable for detection of short circuits. A transient thermal device simulation was performed to determine the temperature stress on the die during a short-circuit event, for the SiC MOSFET. It was found that, for reliability reasons, the short-circuit time should be limited to values well below Si IGBT tolerances. Guidelines toward a rugged design for short-circuit protection (SCP) are presented with an emphasis on improving the reliability and availability of the overall system. A SiC device driver with an integrated SCP is presented for each device-type, respectively, where a short-circuit detection is added to a conventional driver design in a simple way. The SCP driver was experimentally evaluated with a detection time of 180 ns. For all devices, short-circuit times well below 1 s were achieved.

Place, publisher, year, edition, pages
2016. Vol. 63, no 4, p. 1995-2004, article id 7349199
Keyword [en]
BJT, Driver circuits, Failure analysis, Fault detection, Fault protection, JFET, Power MOSFET, Semiconductor device reliability, Short-circuit current, Silicon Carbide (SiC), Wide band gap semiconductors, Bipolar transistors, Electric power system protection, Energy gap, Junction gate field effect transistors, MOSFET devices, Power semiconductor devices, Power transistors, Reconfigurable hardware, Reliability, Reliability analysis, Semiconducting silicon, Semiconductor devices, Short circuit currents, Silicon, Silicon carbide, Driver circuit, Reliability and availability, Short-circuit conditions, Short-circuit protection, Silicon carbides (SiC), Thermal device simulations, Electric network analysis
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Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32589DOI: 10.1109/TIE.2015.2506628Scopus ID: 2-s2.0-84963729279OAI: oai:DiVA.org:ri-32589DiVA, id: diva2:1155335
Note

 Funding details: Swedish Energy Agency

Available from: 2017-11-07 Created: 2017-11-07 Last updated: 2018-01-13Bibliographically approved

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