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Polymer Field-Effect Transistor Gated Via a Poly(Styrenesulfonic Acid) Thin Film
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, p. 143507-Article in journal (Refereed) Published
Abstract [en]

A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (<1€„ms) operates at low voltages (<1€„V). The results presented are relevant for low-cost printed polymer electronics._x000D_

Place, publisher, year, edition, pages
2006. Vol. 89, p. 143507-
Keywords [en]
field effect transistors, organic semiconductors, semiconductor thin films, capacitors, ionic conductivity, polymer electrolytes
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32172OAI: oai:DiVA.org:ri-32172DiVA, id: diva2:1152031
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2018-01-13Bibliographically approved

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