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Low-Voltage Polymer Field-Effect Transistors Gated Via a Proton Conductor
RISE, Swedish ICT, Acreo.
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2007 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 19, no 1, p. 97-Article in journal (Refereed) Published
Abstract [en]

Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1€‰V (see figure) shows fast switching (less than 0.3€‰ms) in ambient atmosphere._x000D_

Place, publisher, year, edition, pages
2007. Vol. 19, no 1, p. 97-
Keywords [en]
Field-effect transistors, polymer, Photolithography, polyelectrolytes, Polymers
National Category
Computer and Information Sciences
Identifiers
URN: urn:nbn:se:ri:diva-32152OAI: oai:DiVA.org:ri-32152DiVA, id: diva2:1152011
Available from: 2017-10-24 Created: 2017-10-24 Last updated: 2018-01-13Bibliographically approved

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